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Volumn 98, Issue 24, 2011, Pages

Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors

Author keywords

[No Author keywords available]

Indexed keywords

CORE/SHELL; GAAS; GAAS/ALGAAS; HIGH SPEED IMAGING; HIGH-SPEED; HIGH-SPEED PERFORMANCE; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MSM PHOTODETECTOR; ON-CHIP OPTICAL INTERCONNECTS; PERSISTENT PHOTOCURRENTS; PICOSECOND RESPONSE; PICOSECONDS; TEMPORAL RESPONSE;

EID: 79960582599     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3600061     Document Type: Article
Times cited : (108)

References (19)
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    • 36248972352 scopus 로고    scopus 로고
    • InAs/InP radial nanowire heterostructures as high electron mobility devices
    • DOI 10.1021/nl072024a
    • X. Jiang, Q. Xiong, S. Nam, F. Qian, Y. Li, and C. M. Lieber, Nano Lett. 1530-6984 7, 3214 (2007). 10.1021/nl072024a (Pubitemid 350132956)
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  • 16
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    • The calculation of responsivity includes the full diameter of the core/shell nanowire (175 nm).
    • The calculation of responsivity includes the full diameter of the core/shell nanowire (175 nm).
  • 18
    • 79960603074 scopus 로고    scopus 로고
    • The calculation of external quantum efficiency assumed a 200 μm laser spot diameter and included the shell and capping layer. Quantum efficiency was determined by evaluating the incident photons in a single pulse and comparing that value to the integrated high-speed response, assuming the measured signal dropped across a bias-T with a characteristic impedance of 50.
    • The calculation of external quantum efficiency assumed a 200 μm laser spot diameter and included the shell and capping layer. Quantum efficiency was determined by evaluating the incident photons in a single pulse and comparing that value to the integrated high-speed response, assuming the measured signal dropped across a bias-T with a characteristic impedance of 50.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.