Probing the gate-voltage-dependent surface potential of individual InAs nanowires using random telegraph signals

ACS Nano

Volumn 5, Issue 3, 2011, Pages 2191-2199

  Salfi, Joe ^a   Paradiso, Nicola ^b   Roddaro, Stefano ^b   Heun, Stefan ^b   Nair, Selvakumar V ^a   Savelyev, Igor G ^a   Blumin, Marina ^a   Beltram, Fabio ^b   Ruda, Harry E ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b SCUOLA NORMALE SUPERIORE   (Italy)

Author keywords

defects; field effect transistors; nanowire; surface potential; surface states

Indexed keywords

CROSS SECTION; ELECTRON CAPTURE; ELECTRONIC OCCUPATION; EMISSION OF ELECTRON; FIELD EFFECTS; INAS; LATTICE-RELAXATION ENERGY; MULTIPHONON EMISSIONS; NOVEL METHODS; POTENTIAL VARIATIONS; RANDOM TELEGRAPH SIGNALS; SELF-CONSISTENT MODEL; SEMICONDUCTOR NANOWIRE; SINGLE DEFECT; SURFACE STATE; SURFACE STATES; SURFACE TRAP; TEMPERATURE DEPENDENT; VOLTAGE DEPENDENCE;

ACTIVATION ENERGY; ELECTRON EMISSION; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; NANOWIRES; SEMICONDUCTING INDIUM; SURFACE POTENTIAL; SURFACE PROPERTIES; TELEGRAPH;

SURFACE DEFECTS;

INDIUM; INDIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; INSTRUMENTATION; MATERIALS TESTING; PARTICLE SIZE; RADIATION EXPOSURE; SEMICONDUCTOR; SIGNAL PROCESSING;

ARSENICALS; ELECTROMAGNETIC FIELDS; INDIUM; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; SEMICONDUCTORS; SIGNAL PROCESSING, COMPUTER-ASSISTED;

EID: 79952933254     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn1033967     Document Type: Article

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