Postgrowth in situ chlorine passivation for suppressing surface-dominant transport in silicon nanowire devices

IEEE Transactions on Nanotechnology

Volumn 11, Issue 4, 2012, Pages 782-787

  Kim, Ja Yeon ^a   Kwon, Min Ki ^b   Vj, Logeeswaran ^c   Grego, Sonia ^d   Saif Islam, M ^c  

^a Korea Photonics Technology Institute (KOPTI)   (South Korea)

^b Chosun University   (South Korea)

^c University of California   (United States)

^d RTI INTERNATIONAL   (United States)

Author keywords

Chlorine passivation; hydrochloric acid (HCl) passivation; leakage current; nanowire; Si nanowire (SiNWs)

Indexed keywords

IN-SITU; MASS MANUFACTURING; MICRO RAMAN SPECTROSCOPY; MISORIENTATIONS; ORDERS OF MAGNITUDE; PASSIVATION METHODS; SI NANOWIRE; SILICON NANOWIRE DEVICE;

CHLORINE; DEGRADATION; HETEROJUNCTIONS; HYDROCHLORIC ACID; LEAKAGE CURRENTS; NANOWIRES; RAMAN SPECTROSCOPY; SILICON;

PASSIVATION;

EID: 84863729891     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2012.2197683     Document Type: Article

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