Defects generation by hydrogen passivation of polycrystalline silicon thin films

Solar Energy

Volumn 80, Issue 6, 2006, Pages 653-657

  Honda, S ^a   Mates, T ^a   Ledinsky M ^a   Fejfar, A ^a   Kocka J ^a   Yamazaki, T ^b   Uraoka, Y ^b   Fuyuki, T ^b   Boldyryeva, H ^c   Mackova A ^c   Perina V ^c  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c NUCLEAR PHYSICS INSTITUTE   (Czech Republic)

Author keywords

ERDA; Grain size; H2 molecules; Hydrogen passivation; Photoluminescence; Raman spectroscopy; Si H2 bonding

Indexed keywords

CHEMICAL BONDS; GRAIN SIZE AND SHAPE; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICON; THIN FILMS;

ELASTIC RECOIL DETECTION ANALYSIS (ERDA); H2 MOLECULES; HYDROGEN PASSIVATION; SI-H2 BONDING;

POLYCRYSTALLINE MATERIALS;

CHEMICAL BONDS; GRAIN SIZE AND SHAPE; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SILICON; THIN FILMS;

HYDROGEN; RAMAN SPECTROSCOPY; SILICON;

EID: 33744956253     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2005.10.013     Document Type: Article

References (9)

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