Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition

Applied Physics Letters

Volumn 100, Issue 10, 2012, Pages

  Yang, S ^a   Kuo, C C ^a   Liu, W R ^b   Lin, B H ^a,b   Hsu, H C ^c   Hsu, C H ^a,b   Hsieh, W F ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE STACKING FAULTS; BASAL STACKING FAULTS; C-PLANE SAPPHIRE; EMISSION MECHANISM; ENERGY SHIFT; INDIRECT EXCITONS; LOCALIZATION EFFECT; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; ZNO EPITAXIAL FILMS; ZNO THIN FILM;

ATOMIC LAYER DEPOSITION; DEFECT DENSITY; EPITAXIAL FILMS; EXCITONS; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84863337658     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3692730     Document Type: Article

References (33)

1. J. D. Ye, S. L. Gu, F. Li, S. M. Zhu, R. Zhang, Y. Shi, Y. D. Zheng, X. W. Sun, G. Q. Lo, and D. L. Kwong, Appl. Phys. Lett. 90, 152108 (2007). 10.1063/1.2722204
2. Y. R. Ryu, T. S. Lee, and H. W. White, Appl. Phys. Lett. 83, 87 (2003). 10.1063/1.1590423
3. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002). 10.1063/1.1504875
4. F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu, Appl. Phys. Lett. 87, 252102 (2005). 10.1063/1.2146208
5. F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. Liu, Appl. Phys. Lett. 88, 152116 (2006). 10.1063/1.2194870
6. W.-R. Liu, Y.-H. Li, W. F. Hsieh, W. C. Lee, M. Hong, J. Kwo, and C.-H. Hsu, J. Phys. D: Appl. Phys. 41, 65105 (2008). 10.1088/0022-3727/41/6/065105
7. W.-R. Liu, W. F. Hsieh, C. H. Hsu, K. S. Liang, and F. S. S. Chien, J. Appl. Crystallogr. 40, 924 (2007). 10.1107/S0021889807033997
8. W.-R. Liu, Y.-H. Li, W. F. Hsieh, C.-H. Hsu, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Cryst. Growth Des. 9, 239 (2009). 10.1021/cg8003849
9. Y. W. Zhang, X. M. Li, W. D. Yu, C. Yang, X. Cao, X. D. Gao, J. F. Kong, W. Z. Shen, J. L. Zhao, and X. W. Sun, J. Phys. D: Appl. Phys. 42, 075410 (2009). 10.1088/0022-3727/42/7/075410
10. T. Koida, S. F. Chichibu, A. Uedono, A. Tsukazaki, M. Kawasaki, T. Sota, Y. Segawa, and H. Koinuma, Appl. Phys. Lett. 82, 532 (2003). 10.1063/1.1540220
11. S. Yang, B. H. Lin, W.-R. Liu, J.-H. Lin, C.-S. Chang, C.-H. Hsu, and W. F. Hsieh, Cryst. Growth Des. 9, 5184 (2009). 10.1021/cg900580r
12. C.-S. Ku, H.-Y. Lee, J.-M. Huang, and C.-M. Lin, Cryst. Growth Des. 10, 1460 (2010). 10.1021/cg9013043
13. L. Dunlop, A. Kursumovic, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 93, 172111 (2008). 10.1063/1.3000604
14. S. J. Lim, S.-J. Kwon, and H. Kim, Appl. Phys. Lett. 91, 183517 (2007). 10.1063/1.2803219
15. P. F. Carcia, R. S. McLean, and M. H. Reilly, Appl. Phys. Lett. 88, 123509 (2006). 10.1063/1.2188379
16. Y. Yan, G. M. Dalpian, M. M. Al-Jassim, and S.-H. Wei, Phys. Rev. B 70, 193206 (2004). 10.1103/PhysRevB.70.193206
17. W. Rieger, R. Dimitrov, D. Brunner, E. Rohrer, O. Ambacher, and M. Stutzmann, Phys. Rev. B 54, 17596 (1996). 10.1103/PhysRevB.54.17596
18. P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J.-D. Ganire, D. Martin, J. Risti, T. Zhu, N. Grandjean, and B. Deveaud-Plédran, J. Appl. Phys. 105, 043102 (2009). 10.1063/1.3075596
19. Y. J. Sun, O. Brandt, U. Jahn, T. Y. Liu, A. Trampert, S. Cronenberg, S. Dhar, and K. H. Ploog, J. Appl. Phys. 92, 5714 (2002). 10.1063/1.1513874
20. P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, J. Appl. Phys. 98, 093519 (2005). 10.1063/1.2128496
21. A. Konar, T. Fang, N. Sun, and D. Jena, Appl. Phys. Lett. 98, 022109 (2011). 10.1063/1.3543846
22. C. Stampfl and C. G. Van de Walle, Phys. Rev. B 57, R15052 (1998). 10.1103/PhysRevB.57.R15052
23. M. Schirra, R. Schneider, A. Reiser, G. M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, C. E. Krill, K. Thonke, and R. Sauer, Phys. Rev. B 77, 125215 (2008). 10.1103/PhysRevB.77.125215
24. V. A. Fonoberov, K. A. Alim, A. A. Balandin, F. Xiu, and J. Liu, Phys. Rev. B 73, 165317 (2006). 10.1103/PhysRevB.73.165317
25. D. W. Hamby, D. A. Lucca, M. J. Klopfstein, and G. Cantwell, J. Appl. Phys. 93, 3214 (2003). 10.1063/1.1545157
26. D. C. Look, D. C. Reynolds, J. R. Sizelove, R. L. Jones, C. W. Litton, G. Cantwell, and W. C. Harsch, Solid State Commun. 105, 399 (1998). 10.1016/S0038-1098(97)10145-4
27. D. Stichtenoth, J. Dürr, C. Ronning, L. Wischmeier, and T. Voss, J. Appl. Phys. 103, 083513 (2008). 10.1063/1.2906320
28. T. Schmidt, K. Lischka, and W. Zulehner, Phys. Rev. B 45, 8989 (1992). 10.1103/PhysRevB.45.8989
29. Y. T. Rebane, Y. G. Shreter, and M. Albrecht, Phys. Status Solidi A 164, 141 (1997). 10.1002/1521-396X(199711)164:1<141::AID-PSSA141>3.0.CO;2-G
30. Q. Li, S. J. Xu, W. C. Cheng, M. H. Xie, S. Y. Tong, C. M. Che, and H. Yang, Appl. Phys. Lett. 79, 1810 (2001). 10.1063/1.1403655
31. S. J. Chung, M. Senthil Kumar, H. J. Lee, and E.-K. Suh, J. Appl. Phys. 95, 3565 (2004). 10.1063/1.1652256
32. L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Duvaut, C. Vannuffel, A. Million, and A. Chenevas-Paule, Appl. Phys. Lett. 76, 2241 (2000). 10.1063/1.126308
33. K. S. Ramaiah, Y. K. Su, S. J. Chang, B. Kerr, H. P. Liu, and I. G. Chen, Appl. Phys. Lett. 84, 3307 (2004). 10.1063/1.1728302