Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a γ-Al2O3 buffer layer

Journal of Physics D: Applied Physics

Volumn 41, Issue 6, 2008, Pages

  Liu, W R ^a   Li, Y H ^a   Hsieh, W F ^a   Hsu, C H ^a,b   Lee, W C ^c   Hong, M ^c   Kwo, J ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; EPITAXIAL GROWTH; GAMMA RAYS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SILICON; ZINC OXIDE;

DEEP-LEVEL EMISSION (DLE); PHOTOLUMINESCENCE MEASUREMENTS;

BUFFER LAYERS;

EID: 40549119188     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/6/065105     Document Type: Article

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