Heteroepitaxial growth and luminescence properties of non-polar (1 1 0) orientation ZnO films on Si(0 0 1) substrates by pulsed laser deposition

Journal of Physics D: Applied Physics

Volumn 42, Issue 7, 2009, Pages

  Zhang, Y W ^a,d   Li, X M ^a   Yu, W D ^a   Yang, C ^a,d   Cao, X ^a,d   Gao, X D ^a   Kong, J F ^b   Shen, W Z ^b   Zhao, J L ^c   Sun, X W ^c  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR-BOUND EXCITONS; DEEP-LEVEL EMISSIONS; DENSITY DEPENDENTS; DONOR ACCEPTORS; EPITAXIAL ORIENTATION RELATIONSHIPS; EX-SITU; FREE ELECTRONS; GROWTH MODES; GROWTH PROCESS; HETERO-EPITAXIAL GROWTHS; HETEROSTRUCTURE; IN-SITU; LOW DEFECT DENSITIES; LUMINESCENCE PROPERTIES; NEAR BAND EDGES; NON-POLAR; OPTICAL QUALITIES; PHOTOLUMINESCENCE SPECTRUM; PULSED LASERS; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONS; SI(0 0 1); ZNO; ZNO FILMS;

DEFECT DENSITY; DIFFRACTION; EMISSION SPECTROSCOPY; LIGHT; LUMINESCENCE; METALLIC FILMS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SUBSTRATES; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

EPITAXIAL GROWTH;

EID: 63749083331     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/7/075410     Document Type: Article

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