Characterization of the donor-acceptor-pair transition in Nitrogen-implanted zinc oxide

Journal of Applied Physics

Volumn 103, Issue 8, 2008, Pages

  Stichtenoth, D ^a   Durr J ^a   Ronning, C ^c   Wischmeier, L ^b   Voss, T ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION BEAMS; ION IMPLANTATION; NITROGEN; PHOTOLUMINESCENCE; ZINC OXIDE;

DONOR ACCEPTOR PAIR (DAP) TRANSITIONS; LUMINESCENT TRANSITION; PAIR TRANSITION; TIME RESOLVED MEASUREMENTS;

CRYSTALS;

EID: 43049148705     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2906320     Document Type: Article

References (28)

1. J. Lu, Q. Liang, Y. Zhang, Z. Ye, and S. Fujita, J. Phys. D 40, 3177 (2007).
2. P. Fons, H. Tampo, A. V. Kolobov, M. Ohkubo, S. Niki, and J. Tominaga, Phys. Rev. Lett. 96, 045504 (2006).
3. D. C. Look and B. Clafin, Phys. Status Solidi B 241, 624 (2004).
4. C. Klingshirn, ChemPhysChem 8, 782 (2007).
5. C. H. Park, S. B. Zhang, and S.-H. Wei, Phys. Rev. B 66, 073202 (2002).
6. J. Rommelùre, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, Appl. Phys. Lett. 83, 287 (2003).
7. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichiba, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawaski, Nat. Mater. 4, 42 (2005).
8. B. K. Meyer, J. Sann, D. M. Hofmann, C. Neumann, and A. Zeuner, Semicond. Sci. Technol. 20, 62 (2005).
9. G. Xiong, K. B. Ucer, R. T. Williams, J. Lee, and D. Bhattacharyya, J. Appl. Phys. 97, 043528 (2005).
10. A. Zeuner, H. Alves, D. M. Hofmann, B. K. Meyer, A. Hoffmann, U. Haboeck, M. Strassburg, and M. Dworzak, Phys. Status Solidi B 234, R7 (2002).
11. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002).
12. K. Thonke, T. Gruber, N. Thofilov, R. Schönfelder, A. Waag, and R. Sauer, Physica B 308-310, 945 (2001).
13. M. Uhrmacher and H. Hofsäss, Nucl. Instrum. Methods Phys. Res. B 240, 48 (2005).
14. J. Ziegler, J. Biersack, and U. Littmark, The Stopping and Ranges of Ions in Solids (Pergamon, New York, 1985; see also www.srim.org.
15. L. Wischmeier, T. Voss, S. Börner, and W. Schade, Appl. Phys. A: Mater. Sci. Process. 84, 111 (2006).
16. T. Voss and L. Wischmeier, J. Nanosci. Nanotechnol. 8, 228 (2008).
17. L. Wischmeier, T. Voss, I. Rückmann, J. Gutowski, A. Mofor, A. Bakin, and A. Waag, Phys. Rev. B 74, 195333 (2006).
18. C. Ronning, P. X. Gao, Y. Ding, Z. Wang, and D. Schwen, Appl. Phys. Lett. 84, 783 (2004).
19. B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Strassburg, M. Dworzak, U. Haboeck, and A. V. Rodina, Phys. Status Solidi B 241, 231 (2004).
20. A. Permogorov, Excitons (North-Holland, Amsterdam, 1982), Vol. 2, p. 177.
21. D. A. Lucca, D. W. Hamby, M. J. Klopfstein, and G. Cantwell, Phys. Status Solidi B 229, 845 (2002).
22. P. Bäume, M. Behringer, J. Gutowski, and D. Hommel, Phys. Rev. B 62, 8023 (2000).
23. C. Klingshirn, Semiconductor Optics 2nd ed. (Springer, Berlin, 2005).
24. D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, Phys. Rev. 140, A202 (1965).
25. ZnO in II-VI and I-VII Compounds, Landolt-Börnstein New Series, Group IV, Vol. 41, Pt. (Springer, Heidelberg, 1999).
26. C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000).
27. D. G. McCulloch and S. Prawer, J. Appl. Phys. 78, 3040 (1995).
28. K. Peters, personal communication (2007).