Organic nonvolatile memory devices with charge trapping multilayer graphene film

Nanotechnology

Volumn 23, Issue 10, 2012, Pages

  Ji, Yongsung ^a   Choe, Minhyeok ^a   Cho, Byungjin ^a   Song, Sunghoon ^a   Yoon, Jongwon ^a   Ko, Heung Cho ^a   Lee, Takhee ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAY-TYPE; CARBON RICH; CHARGE TRAP; CONDUCTION PATHS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; LOW RESISTANCE; ON/OFF RATIO; ORGANIC NON-VOLATILE MEMORY DEVICES; RETENTION TIME; SPACE-CHARGE-LIMITED CURRENT; SWITCHING MECHANISM;

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; GRAPHENE; NONVOLATILE STORAGE; POLYIMIDES;

MULTILAYERS;

EID: 84863155473     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/10/105202     Document Type: Article

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