-
1
-
-
0000748226
-
-
S. Q. Liu, N. J. Wu, A. Ignatiev, Appl. Phys. Lett. 2000, 76, 2749.
-
(2000)
Appl. Phys. Lett
, vol.76
, pp. 2749
-
-
Liu, S.Q.1
Wu, N.J.2
Ignatiev, A.3
-
2
-
-
28444445912
-
-
X. Chen, N. J. Wu, J. Strozier, A. Ignatiev. Appl. Phys. Lett. 2005, 87, 233 506.
-
(2005)
Appl. Phys. Lett
, vol.87
, pp. 233-506
-
-
Chen, X.1
Wu, N.J.2
Strozier, J.3
Ignatiev, A.4
-
3
-
-
0042378349
-
-
A. Baikalov, Y. Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y. Y. Sun, Y. Y. Xue, C. W. Chu, Appl. Phys. Lett. 2003, 83, 957.
-
(2003)
Appl. Phys. Lett
, vol.83
, pp. 957
-
-
Baikalov, A.1
Wang, Y.Q.2
Shen, B.3
Lorenz, B.4
Tsui, S.5
Sun, Y.Y.6
Xue, Y.Y.7
Chu, C.W.8
-
4
-
-
10044237971
-
-
A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura, Appl. Phys. Lett. 2004, 85, 4073.
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 4073
-
-
Sawa, A.1
Fujii, T.2
Kawasaki, M.3
Tokura, Y.4
-
5
-
-
0001331485
-
-
A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, D. Widmer, Appl. Phys. Lett. 2000, 77, 139.
-
(2000)
Appl. Phys. Lett
, vol.77
, pp. 139
-
-
Beck, A.1
Bednorz, J.G.2
Gerber, C.3
Rossel, C.4
Widmer, D.5
-
7
-
-
10044271110
-
-
a) J. Y. Ouyang, C. W. Chu, C. R. Szmanda, L. P. Ma, Y. Yang, Nat. Mater. 2004, 3, 918.
-
(2004)
Nat. Mater
, vol.3
, pp. 918
-
-
Ouyang, J.Y.1
Chu, C.W.2
Szmanda, C.R.3
Ma, L.P.4
Yang, Y.5
-
8
-
-
19744382387
-
-
b) Y. Yang, L. P. Ma, J. H. Wu, MRS Bull. 2004, 29, 833.
-
(2004)
MRS Bull
, vol.29
, pp. 833
-
-
Yang, Y.1
Ma, L.P.2
Wu, J.H.3
-
9
-
-
0036923301
-
-
W. W. Zhuang, W. Pan, B. D. Ulrich, J. J. Lee, L. Stecker, A. Burmaster, D. R. Evans, S. T. Hsu, M. Tajiri, A. Shimaoka, K. Inouc, T. Naka, N. Awaya, K. Sakiyama, Y. Wang, S. Q. Liu, N. J. Wu, A. Ignatiev, Tech. Dig. - Int. Electron Devices Meet. 2002, 193.
-
(2002)
Tech. Dig. - Int. Electron Devices Meet
, vol.193
-
-
Zhuang, W.W.1
Pan, W.2
Ulrich, B.D.3
Lee, J.J.4
Stecker, L.5
Burmaster, A.6
Evans, D.R.7
Hsu, S.T.8
Tajiri, M.9
Shimaoka, A.10
Inouc, K.11
Naka, T.12
Awaya, N.13
Sakiyama, K.14
Wang, Y.15
Liu, S.Q.16
Wu, N.J.17
Ignatiev, A.18
-
10
-
-
2942548117
-
-
M. J. Rozenberg, I. H. Inoue, M. J. Sánchcz, Phys. Rev. Lett. 2005, 92, 178 302.
-
(2005)
Phys. Rev. Lett
, vol.92
, pp. 178-302
-
-
Rozenberg, M.J.1
Inoue, I.H.2
Sánchcz, M.J.3
-
13
-
-
34547345970
-
-
In our experience, applying several pulses (±5 V for 5 ms) gave rise to more reproducible low- and high-resistance states than applying a single pulse. The stability of low- and high-resistance states increased with increasing number of pulses and almost saturated near 10 applied pulses. On the other hand, there was essentially no difference between one 50 ms applied pulse and one 5 ms applied pulse
-
In our experience, applying several pulses (±5 V for 5 ms) gave rise to more reproducible low- and high-resistance states than applying a single pulse. The stability of low- and high-resistance states increased with increasing number of pulses and almost saturated near 10 applied pulses. On the other hand, there was essentially no difference between one 50 ms applied pulse and one 5 ms applied pulse.
-
-
-
-
14
-
-
3142563213
-
-
D. W. Reagor, S. Y. Lee, Y. Li, Q. X. Jia, J. Appl. Phys. 2004, 95, 7971.
-
(2004)
J. Appl. Phys
, vol.95
, pp. 7971
-
-
Reagor, D.W.1
Lee, S.Y.2
Li, Y.3
Jia, Q.X.4
|