-
1
-
-
0035834444
-
Logic circuits with carbon nanotube transistors
-
Bachtold, A.; Hadley, P.; Nakanishi, T.; Dekker, C. Logic Circuits with Carbon Nanotube Transistors. Science 2001, 294, 1317-1320.
-
(2001)
Science
, vol.294
, pp. 1317-1320
-
-
Bachtold, A.1
Hadley, P.2
Nakanishi, T.3
Dekker, C.4
-
2
-
-
0034617249
-
Carbon nanotube-based nonvolatile random access memory for molecular computing
-
Rueckes, T.; Kim, K.; Joselevich, E.; Tseng, G. Y.; Cheung, C. L.; Lieber, C. M. Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing. Science 2000, 289, 94-97.
-
(2000)
Science
, vol.289
, pp. 94-97
-
-
Rueckes, T.1
Kim, K.2
Joselevich, E.3
Tseng, G.Y.4
Cheung, C.L.5
Lieber, C.M.6
-
3
-
-
0035834415
-
Logic gates and computation from assembled nanowire building blocks
-
Huang, Y.; Duan, X.; Cui, Y.; Lauhon, L. J.; Kim, K. H.; Lieber, C. M. Logic Gates and Computation from Assembled Nanowire Building Blocks. Science 2001, 294, 1313-1316.
-
(2001)
Science
, vol.294
, pp. 1313-1316
-
-
Huang, Y.1
Duan, X.2
Cui, Y.3
Lauhon, L.J.4
Kim, K.H.5
Lieber, C.M.6
-
5
-
-
0031575290
-
Single-electron transistor made from a cadmium selenide nanocrystal
-
Klein, D. L.; Roth, R.; Lim, A. K. L.; Alivisatos, A. P.; McEuen, P. L. A. Single-Electron Transistor Made from a Cadmium Selenide Nanocrystal. Nature 1997, 389, 699-701.
-
(1997)
Nature
, vol.389
, pp. 699-701
-
-
Klein, D.L.1
Roth, R.2
Lim, A.K.L.3
Alivisatos, A.P.4
McEuen, P.L.A.5
-
6
-
-
44149119344
-
Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors
-
Wang, X.; Ouyang, Y.; Li, X.; Wang, H.; Guo, J.; Dai, H. Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors. Phys. Rev. Lett. 2008, 700, 206803.
-
(2008)
Phys. Rev. Lett.
, vol.700
, pp. 206803
-
-
Wang, X.1
Ouyang, Y.2
Li, X.3
Wang, H.4
Guo, J.5
Dai, H.6
-
7
-
-
65249185111
-
Longitudinal unzipping of carbon nanotubes to form graphene nanoribbons
-
Kosynkin, D. V.; Higginbotham, A. L.; Sinitskii, A.; Lomeda, J. R.; Dimiev, A.; Price, B. K.; Tour, J. M. Longitudinal Unzipping of Carbon Nanotubes to Form Graphene Nanoribbons. Nature 2009, 458, 872-876.
-
(2009)
Nature
, vol.458
, pp. 872-876
-
-
Kosynkin, D.V.1
Higginbotham, A.L.2
Sinitskii, A.3
Lomeda, J.R.4
Dimiev, A.5
Price, B.K.6
Tour, J.M.7
-
8
-
-
0033584805
-
Large on-off ratios and negative differential resistance in a molecular electronic device
-
Chen, J.; Reed, M. A.; Rawlett, A. M.; Tour, J. M. Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device. Science 1999, 286, 1550-1552.
-
(1999)
Science
, vol.286
, pp. 1550-1552
-
-
Chen, J.1
Reed, M.A.2
Rawlett, A.M.3
Tour, J.M.4
-
9
-
-
19944433887
-
Molecularly inherent voltage-controlled conductance switching
-
Blum, A. S.; Kushmerick, J. G.; Long, D. P.; Patterson, C. H.; Yang, J. C.; Henderson, J. C.; Yao, Y.; Tour, J. M.; Shashidhar, R.; Ratna, B. R. Molecularly Inherent Voltage-Controlled Conductance Switching. Nat. Mater. 2005, 4, 167-172.
-
(2005)
Nat. Mater.
, vol.4
, pp. 167-172
-
-
Blum, A.S.1
Kushmerick, J.G.2
Long, D.P.3
Patterson, C.H.4
Yang, J.C.5
Henderson, J.C.6
Yao, Y.7
Tour, J.M.8
Shashidhar, R.9
Ratna, B.R.10
-
10
-
-
1042300764
-
2-C coaxial nanocables and chains of carbon nanotube-SiC heterojunctions
-
Li, Y. B.; Bando, Y.;Golberg, D. SiC-SiO2-C Coaxial Nanocables and Chains of Carbon Nanotube-SiC Heterojunctions. Adv. Mater. 2004, 16, 93-96.
-
(2004)
Adv. Mater.
, vol.16
, pp. 93-96
-
-
Li, Y.B.1
Bando, Y.2
Golberg, D.3
-
11
-
-
56749105604
-
Electronic two-terminal bistable graphitic memories
-
Li, Y.; Sinitskii, A.; Tour, J. M. Electronic Two-Terminal Bistable Graphitic Memories. Nat. Mater. 2008, 7, 966-971.
-
(2008)
Nat. Mater.
, vol.7
, pp. 966-971
-
-
Li, Y.1
Sinitskii, A.2
Tour, J.M.3
-
12
-
-
0003998388
-
-
Lide, D. R., Ed CRC Press: Boca Raton, FL
-
Lide, D. R., Ed. CRC Handbook of Chemistry and Physics; CRC Press: Boca Raton, FL, 1995-1996; Vol.76.
-
(1995)
CRC Handbook of Chemistry and Physics
, vol.76
-
-
-
13
-
-
0035794576
-
Current saturation and electrical breakdown in multiwalled carbon nanotubes
-
DOI 10.1103/PhysRevLett.86.3128
-
Collins, P. G.; Hersam, M.; Arnold, M.; Martel, R.; Avouris, R. Current Saturation and Electrical Breakdown in Multiwalled Carbon Nanotubes. Phys. Rev. Lett. 2001, 86, 3128-3131. (Pubitemid 32317878)
-
(2001)
Physical Review Letters
, vol.86
, Issue.14
, pp. 3128-3131
-
-
Collins, P.G.1
Hersam, M.2
Arnold, M.3
Martel, R.4
Avouris, Ph.5
-
14
-
-
33745762811
-
Carbon nanotube linear bearing nanoswitches
-
Deshpande, V. V.; Chiu, H. Y.; Postma, H. W. C.; Miko, C.; Forro, L.; Bockrath, M. Carbon Nanotube Linear Bearing Nanoswitches. Nano Lett. 2006, 6, 1092-1095.
-
(2006)
Nano Lett.
, vol.6
, pp. 1092-1095
-
-
Deshpande, V.V.1
Chiu, H.Y.2
Postma, H.W.C.3
Miko, C.4
Forro, L.5
Bockrath, M.6
-
15
-
-
33645683483
-
In situ fabrication and graphitization of amorphous carbon nanowires and their electrical properties
-
Jin, C. H.; Wang, J. Y.; Chen, Q.; Peng, L. M. In Situ Fabrication and Graphitization of Amorphous Carbon Nanowires and Their Electrical Properties. J. Phys. Chem. B 2006, 770, 5423-5428.
-
(2006)
J. Phys. Chem. B
, vol.770
, pp. 5423-5428
-
-
Jin, C.H.1
Wang, J.Y.2
Chen, Q.3
Peng, L.M.4
-
16
-
-
56749178016
-
Graphene-based atomic-scale switches
-
Standley, B.; Bao, W.; Zhang, H.; Bruck, J.; Lau, C. N.; Bockrath, M. Graphene-Based Atomic-Scale Switches. Nano Lett. 2008, 8, 3345-3349.
-
(2008)
Nano Lett.
, vol.8
, pp. 3345-3349
-
-
Standley, B.1
Bao, W.2
Zhang, H.3
Bruck, J.4
Lau, C.N.5
Bockrath, M.6
-
17
-
-
64549103733
-
Carbon-based resistive memory
-
Kreupl, F.; Bruchhaus, R.; Majewski, P.; Philipp, J. B.; Symanczyk, R.; Happ, T.; Arndt, C.; Vogt, M.; Zimmermann, R.; Buerke, A.; Graham, A. P.; Kund, M. Carbon-Based Resistive Memory. Proc. IEEE Electron Devices Meeting 2008, 521-524.
-
(2008)
Proc. IEEE Electron Devices Meeting
, pp. 521-524
-
-
Kreupl, F.1
Bruchhaus, R.2
Majewski, P.3
Philipp, J.B.4
Symanczyk, R.5
Happ, T.6
Arndt, C.7
Vogt, M.8
Zimmermann, R.9
Buerke, A.10
Graham, A.P.11
Kund, M.12
-
18
-
-
62549162242
-
Non-volatile resistance switching using single-wall carbon nanotube encapsulating fullerene molecules
-
Naitoh, Y.; Yanagi, K.; Suga, H.; Horikawa, M.; Tanaka, T.; Kataura, H.; Shimizu, T. Non-Volatile Resistance Switching Using Single-Wall Carbon Nanotube Encapsulating Fullerene Molecules. Appl. Phys. Express 2009, 2, 035008.
-
(2009)
Appl. Phys. Express
, vol.2
, pp. 035008
-
-
Naitoh, Y.1
Yanagi, K.2
Suga, H.3
Horikawa, M.4
Tanaka, T.5
Kataura, H.6
Shimizu, T.7
-
19
-
-
70349513349
-
2 substrates
-
in press
-
Yao, J.; Zhong, L.; Zhang, Z.; He, T.; Jin, Z.; Wheeler, P. J.; Natelson, D.; Tour, J. M. Resistive Switching in Nanogap Systems on SiO2 Substrates. Small, in press.
-
Small
-
-
Yao, J.1
Zhong, L.2
Zhang, Z.3
He, T.4
Jin, Z.5
Wheeler, P.J.6
Natelson, D.7
Tour, J.M.8
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