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Applied Physics Letters

Volumn 97, Issue 6, 2010, Pages

Electrical characterization of organic resistive memory with interfacial oxide layers formed by O2 plasma treatment

(4) Cho, Byungjin a Song, Sunghoon a Ji, Yongsung a Lee, Takhee a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERIZATION; INTERFACIAL OXIDE LAYERS; INTERFACIAL OXIDES; MEMORY DEVICE; ON/OFF RATIO; ORGANIC MEMORIES; OXIDATION PROCESS; PLASMA TREATMENT; REPRODUCIBILITIES; RESISTANCE VALUES; RESISTIVE MEMORIES; THRESHOLD VOLTAGE DISTRIBUTION;

OXIDATION; OXIDATION RESISTANCE;

PLASMA APPLICATIONS;

EID: 77955728102 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3478840 Document Type: Article

Times cited : (46)

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