A direct metal transfer method for cross-bar type polymer non-volatile memory applications

Nanotechnology

Volumn 19, Issue 40, 2008, Pages

  Kim, Tae Wook ^a   Lee, Kyeongmi ^a,b   Oh, Seung Hwan ^a   Wang, Gunuk ^a   Kim, Dong Yu ^a   Jung, Gun Young ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABS RESINS; CHEMICALS REMOVAL (WATER TREATMENT); DILATOMETERS; HEAT TREATMENT; POLYMERS;

METAL TRANSFERS; NON-VOLATILE MEMORY DEVICES; ON/OFF RATIOS; THERMAL TREATMENTS;

DATA STORAGE EQUIPMENT;

CROSS BAR POLYMER; POLYMER; UNCLASSIFIED DRUG;

ARTICLE; CELL SIZE; DIRECT METAL TRANSFER; ELECTROENCEPHALOGRAM; ELECTRON TRANSPORT; MEMORY; PHYSICAL PHENOMENA; PRIORITY JOURNAL;

EID: 51349159205     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/40/405201     Document Type: Article

References (25)

1. Müller C D, Falcou A, Reckefuss N, Rojahn M, Wiederhirn V, Rudati P, Frohne H, Nuyken O, Becker H and Meerholz K 2003 Nature 421 829
2. Chen Y, Jung G Y, Ohlberg D A A, Li X, Stewart D R, Jeppesen J O, Nielsen K A, Stoddart J F and Williams R S 2003 Nanotechnology 14 462
3. Kim J Y, Lee K, Coates N E, Moses D, Nguyen T Q, Dante M and Heeger A J 2007 Science 317 222
4. Darlinski G, Böttger U, Waser R, Klauk H, Halik M, Zschieschang U, Schmid G and Dehm C 2005 J. Appl. Phys. 97 093708
5. Lee T W, Byun Y, Koo B W, Kang I N, Lyu Y Y, Lee C H, Pu L and Lee S Y 2005 Adv. Mater. 17 2180
6. Wei D, Baral J K, Österbacka R and Ivaska A 2008 Nanotechnology 19 055203
7. Pearson C, Ahn J H, Mabrook M F, Zeze D A, Petty M C, Kamtekar K T, Wang C, Bryce M R, Dimitrakis P and Tsoukalas D 2007 Appl. Phys. Lett. 91 123506
8. Ling Q D, Kang E T, Neoh K G, Chen Y, Zhuang X D, Zhu C and Chan D S H 2008 Appl. Phys. Lett. 92 143302
9. Kim T W, Oh S H, Choi H, Wang G, Hwang H, Kim D Y and Lee T 2008 IEEE Electron Device Lett. 29 852
10. Kim T W, Oh S H, Choi H, Wang G, Hwang H, Kim D Y and Lee T 2008 Appl. Phys. Lett. 92 253308
11. Son D I, Kim J H, Park D H, Choi W K, Li F, Ham J H and Kim T W 2008 Nanotechnology 19 055204
12. Tseng R J, Baker C O, Shedd B, Huang J, Kaner R B, Ouyang J and Yang Y 2007 Appl. Phys. Lett. 90 53101
13. Yang Y, Ma L and Wu J 2004 MRS Bull. 29 833
14. Scott J C and Bozano L D 2007 Adv. Mater. 19 1452
15. Choi J S, Kim J H, Kim S H and Suh D H 2006 Appl. Phys. Lett. 89 152111
16. Paul S, Kanwal A and Chhowalla M 2006 Nanotechnology 17 145
17. Kwan W L, Tseng R J, Wu W, Pei Q and Yang Y 2007 IEDM Tech. Dig. 237-40
18. Kim C, Burrows P E and Forrest S R 2000 Science 288 831
19. Kim C, Shtein M and Forrest S R 2002 Appl. Phys. Lett. 8 4051
20. Lackowski W M, Ghosh P and Crooks R M 1999 J. Am. Chem. Soc. 121 1419
21. Loo Y L, Willett R L, Baldwin K W and Rogers J A 2002 J. Am. Chem Soc. 124 7654
22. Oh S H, Na S I, Nah Y C, Vak D, Kim S S and Kim D Y 2007 Org. Electron. 8 77
23. Scherf U and List E J W 2002 Adv. Mater. 14 477
24. Jung G Y, Wu W, Li Z, Chen Y, Wang S Y, Tong W M and Williams R S 2005 Langmuir 21 1158
25. Lee K, Oh S H, Kang N G, Lee J S, Kim D Y, Lee H and Jung G Y 2008 Langmuir 24 8413