Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

ACS Nano

Volumn 4, Issue 7, 2010, Pages 3987-3992

  Liu, Juqing ^a   Yin, Zongyou ^b   Cao, Xiehong ^b   Zhao, Fei ^a   Lin, Anping ^a   Xie, Linghai ^a   Fan, Quli ^a   Boey, Freddy ^b,c   Zhang, Hua ^b,c   Huang, Wei ^a  

^a NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

bulk heterojunction; polymer memory; reduced graphene oxide; sheet resistance; write once read manytimes

Indexed keywords

BULK HETEROJUNCTION; DEVICE STRUCTURES; ELECTRICAL BISTABILITY; ELECTRICAL FIELD; ELECTRICAL TRANSITION; FABRICATED DEVICE; MEMORY DEVICE; MEMORY EFFECTS; NONVOLATILE MEMORY DEVICES; OHMIC CURRENTS; ON/OFF RATIO; POLYMER MEMORY; REDUCED GRAPHENE OXIDE; SWITCHING THRESHOLD VOLTAGE; THERMIONIC EMISSION CURRENT; WRITE ONCE; WRITE-ONCE-READ-MANY;

ELECTRIC RESISTANCE; GRAPHENE; GRAPHITE; HETEROJUNCTIONS; NONVOLATILE STORAGE; POLYMERS; SHEET RESISTANCE; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

(6,6) PHENYL C61 BUTYRIC ACID METHYL ESTER; (6,6)-PHENYL C61-BUTYRIC ACID METHYL ESTER; FULLERENE DERIVATIVE; GRAPHITE; OXIDE; POLY(3 HEXYLTHIOPHENE); POLY(3-HEXYLTHIOPHENE); THIOPHENE DERIVATIVE;

ARTICLE; CHEMISTRY; DATA STORAGE DEVICE; ELECTRIC CONDUCTIVITY; ELECTRODE;

COMPUTER STORAGE DEVICES; ELECTRIC CONDUCTIVITY; ELECTRODES; FULLERENES; GRAPHITE; OXIDES; THIOPHENES;

EID: 77955547629     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn100877s     Document Type: Article

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