Effect of postdeposition annealing temperatures on electrical characteristics of molecular-beam-deposited HfO 2 on n-InAs/InGaAs Metal-oxide-semiconductor capacitors

Applied Physics Express

Volumn 5, Issue 2, 2012, Pages

  Trinh, Hai Dang ^a   Lin, Yueh Chin ^a   Wang, Huan Chung ^a   Chang, Chia Hua ^a   Kakushima, Kuniyuki ^b   Iwai, Hiroshi ^b   Kawanago, Takamasa ^b   Lin, Yan Gu ^a   Chen, Chi Ming ^a   Wong, Yuen Yee ^a   Huang, Guan Ning ^a   Hudait, Mantu ^c   Chang, Edward Yi ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c Virginia Polytechnic Institute and State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; DETECTION LEVELS; ELECTRICAL CHARACTERISTIC; FREQUENCY DISPERSION; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; POST DEPOSITION ANNEALING;

CAPACITORS; DIELECTRIC DEVICES; HAFNIUM OXIDES; MOLECULAR BEAMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84863149281     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.021104     Document Type: Article

References (24)

1. H. D. Trinh et al.: Appl. Phys. Lett. 97 (2010) 042903.
2. H. D. Trinh et al.: IEEE Electron Device Lett. 32 (2011) 752.
3. T. D. Lin et al.: Appl. Phys. Lett. 93 (2008) 033516.
4. M. M. Frank et al.: Appl. Phys. Lett. 86 (2005) 152904.
5. S. Koveshnikov et al.: Appl. Phys. Lett. 92 (2008) 222904.
6. Y. Xuan et al.: Appl. Phys. Lett. 88 (2006) 263518.
7. C. L. Hinkle et al.: Curr. Opin. Solid State Mater. Sci. 15 (2011) 188.
8. S. Oktyabrsky et al.: Mater. Sci. Eng. B 135 (2006) 272.
9. I. Ok et al.: IEEE Electron Device Lett. 27 (2006) 145.
10. H. Kim et al.: Appl. Phys. Lett. 93 (2008) 102906.
11. F. Zhu et al.: Appl. Phys. Lett. 94 (2009) 013511.
12. D.-H. Kim and J. A. Alamo: IEEE Electron Device Lett. 29 (2008) 830.
13. C.-I. Kuo et al.: Electrochem. Solid-State Lett. 11 (2008) H193.
14. H.-D. Trinh et al.: Jpn. J. Appl. Phys. 49 (2010) 111201.
15. D. Wheeler et al.: Microelectron. Eng. 86 (2009) 1561.
16. N. Li et al.: Appl. Phys. Lett. 92 (2008) 143507.
17. H.-Y. Lin et al.: Appl. Phys. Lett. 98 (2011) 123509.
18. E. O'Connor et al.: Appl. Phys. Lett. 94 (2009) 102902.
19. H. D. Trinh et al.: submitted to IEEE Trans. Electron Devices.
20. H. Kim et al.: Appl. Phys. Lett. 82 (2003) 106.
21. S. Mudanai et al.: IEEE Electron Device Lett. 23 (2002) 728.
22. T.-H. Moon et al.: Microelectron. Eng. 83 (2006) 2452.
23. K. Xiong et al.: Appl. Phys. Lett. 87 (2005) 183505.
24. D. K. Schroder: Semiconductor Material and Device Characterization (Wiley, New York, 2006).