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Volumn 49, Issue 11, 2010, Pages

Effects of wet chemical and trimethyl aluminum treatments on the interface properties in atomic layer deposition of Al2O3 on InAs

(8) Trinh, Hai Dang a Chang, Edward Yi a Wong, Yuen Yee a Yu, Chih Chieh b Chang, Chia Yuan a Lin, Yueh Chin a Nguyen, Hong Quan a Tran, Binh Tinh a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b INSTRUMENT TECHNOLOGY RESEARCH CENTER (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CHEMICAL TREATMENTS; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; IN-SITU; INAS; INTERFACE PROPERTY; INTERFACE QUALITY; METAL OXIDE SEMICONDUCTOR; NATIVE OXIDES; PRE-TREATMENT; SULFIDE TREATMENT; TRIMETHYL ALUMINUMS; WET AND DRY; WET CHEMICAL TREATMENT; WET CHEMICALS; X RAY PHOTOELECTRON SPECTRA; XPS ANALYSIS;

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; CAPACITANCE; CHEMICAL CLEANING; CURRENT VOLTAGE CHARACTERISTICS; HYDROCHLORIC ACID; INDIUM ARSENIDE; SEMICONDUCTING INDIUM; THERMOANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE CLEANING;

EID: 79551650153 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.111201 Document Type: Article

Times cited : (34)

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