InAs channel-based quantum well transistors for high-speed and low-voltage digital applications

Electrochemical and Solid-State Letters

Volumn 11, Issue 7, 2008, Pages

  Kuo, Chien I ^a   Hsu, Heng Tung ^b   Chang, Edward Yi ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b YUAN ZE UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CUTOFF FREQUENCY; DRAIN CURRENT; ELECTRIC POWER UTILIZATION; INDIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

GATE DELAY; OSCILLATION FREQUENCY; QUANTUM WELL FIELD-EFFECT TRANSISTORS (QWFETS);

FIELD EFFECT TRANSISTORS;

EID: 43949109273     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2917808     Document Type: Article

References (15)

1. R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, M. Metz, and M. Radosavljevic, IEEE Trans. Nanotechnol., 4, 153 (2005).
2. D. H. Kim, J. A. Alamo, J. H. Lee, and K. S. Seo, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2007.904986, 54, 2606 (2007).
3. S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. Emeny, D. Hayes, K. Hilton, R. Jefferies, T. Martin, in IEDM Technical Digest, p. 763 (2005).
4. International Technology Roadmap for Semiconductors, in ITRS Winter Public Conference, Japan (2007).
5. R. Chau, S. Datta, and A. Majumdar, in Proceedings of the IEEE CSIC Digest, IEEE, p. 170 (2005).
6. S. J. Yeon, M. Park, J. Choi, and K. Seo, in IEDM Technical Digest, p. 613 (2007).
7. K. Shinohara, W. Ha, M. J. W. Rodwell, and B. Brar, in Proceedings of the 19th IEEE Indium Phosphide and Related Material (IPRM) Conference, IEEE, p. 18, May (2007).
8. C. Y. Chang, H. T. Hsu, Y. E. Chang, C. I. Kuo, S. Datta, M. Radosavljevic, Y. Miyamoto, and G. W. Huang, IEEE Electron Device Lett., 28, 856 (2007).
9. T. Akazaki, K. Arai, T. Enoki, and Y. Ishii, IEEE Electron Device Lett. 0741-3106 10.1109/55.145073, 13, 325 (1992).
10. G. Meneghesso, D. Buttari, E. Perin, C. Canali, and E. Zanoni, in IEDM Technical Digest, p. 227 (1998).
11. T. Suemitsu, H. Yokoyama, T. Ishii, T. Enoki, G. Meneghesso, and E. Zanoni, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2002.803646, 49, 1694 (2002).
12. Y. Yamashita, A. Endoh, K. Shinohara, M. Higashiwaki, K. Hikosaka, T. Mimura, S. Hiyamizu, and T. Matsui, IEEE Electron Device Lett. 0741-3106 10.1109/55.936345, 22, 367 (2001).
13. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, IEEE Trans. Microwave Theory Tech. 0018-9480 10.1109/22.3650, 36, 1151 (1988).
14. J. Guo, A. Javey, H. Dai, and M. Lundstrom, in IEDM Technical Digest, p. 703 (2004).
15. K. Kuhn, R. Basco, D. Becher, M. Hattendorf, P. Packan, I. Post, P. Vandervoorn, and I. Young, in VLSI Symposium Technical Digest, p. 224 (2004).