Electrical characterization of Al2O3/n-InAs metaloxidesemiconductor capacitors with various surface treatments

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 752-754

  Trinh, H D ^a   Brammertz, G ^b   Chang, E Y ^a   Kuo, C I ^a   Lu, C Y ^a   Lin, Y C ^a   Nguyen, H Q ^a   Wong, Y Y ^a   Tran, B T ^a   Tran, K ^c   Tran, H ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b IMEC   (Belgium)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Al2O3; atomic layer deposition (ALD); C V simulation; InAs; metaloxidesemiconductor capacitors (MOSCAPs); surface treatment

Indexed keywords

AL2O3; ATOMIC LAYER DEPOSITION (ALD); C-V SIMULATION; INAS; METALOXIDESEMICONDUCTOR CAPACITORS (MOSCAPS);

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; CAPACITORS; CONDUCTION BANDS; ELECTRON MOBILITY; ENERGY GAP; INDIUM ARSENIDE; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING INDIUM; VANADIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE TREATMENT;

EID: 79957622468     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2128853     Document Type: Article

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