Deposition of HfO2 on InAs by atomic-layer deposition

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1561-1563

  Wheeler, D ^b   Wernersson, L E ^a   Froberg L ^a   Thelander, C ^a   Mikkelsen, A ^a   Weststrate, K J ^a   Sonnet, A ^c   Vogel, E M ^c   Seabaugh, A ^b  

^a LUND UNIVERSITY   (Sweden)

^b University of Notre Dame   (United States)

^c The University of Texas at Dallas   (United States)

Author keywords

Atomic layer deposition; Hafnium dioxide; III V Metal oxide semiconductor; Indium arsenide

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; CHEMICAL TREATMENTS; CURRENT VOLTAGE; HAFNIUM DIOXIDE; HAFNIUM DIOXIDE FILM; III-V METAL-OXIDE-SEMICONDUCTOR; INAS; INTERFACE TRAP DENSITY; METAL-OXIDE- SEMICONDUCTORCAPACITORS; SUBSTRATE PRETREATMENT; SUBSTRATE TEMPERATURE; TERMAN METHODS;

ATOMS; CAPACITANCE; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; HAFNIUM; HAFNIUM COMPOUNDS; INDIUM ARSENIDE; MOS CAPACITORS; MOSFET DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH;

SUBSTRATES;

EID: 67349131254     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.091     Document Type: Article

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