Influences of surface reconstruction on the atomic-layer-deposited HfO 2 / Al2 O3 /n-InAs metal-oxide-semiconductor capacitors

Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

  Lin, Hau Yu ^a   Wu, San Lein ^b   Cheng, Chao Ching ^c   Ko, Chih Hsin ^c   Wann, Clement H ^c   Lin, You Ru ^c   Chang, Shoou Jinn ^a   Wu, Tai Bor ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC OXIDE; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE CHARACTERISTIC; INAS; INTERFACIAL REACTIONS; INVERSION CAPACITANCE; LOWER FREQUENCIES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OXIDIZATION; RECONSTRUCTED SURFACES; SURFACE SAMPLE;

ALUMINUM; ARSENIC; CAPACITANCE; CAPACITORS; DIELECTRIC FILMS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SEMICONDUCTING INDIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM ARSENIDE;

EID: 79953901359     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3571293     Document Type: Article

References (24)

1. Y. -C. Yeo, T. -J. King, and C. Hu, IEEE Trans. Electron Devices 0018-9383 50, 1027 (2003). 10.1109/TED.2003.812504
2. C. -H. Jan, P. Bai, S. Biswas, M. Buehler, Z. -P. Chen, G. Curello, S. Gannavaram, W. Hafez, J. He, J. Hicks, U. Jalan, N. Lazo, J. Lin, N. Lindert, C. Litteken, M. Jones, M. Kang, K. Komeyli, A. Mezhiba, S. Naskar, S. Olson, J. Park, R. Parker, L. Pei, I. Post, N. Pradhan, C. Prasad, M. Prince, J. Rizk, G. Sacks, H. Tashiro, D. Towner, C. Tsai, Y. Wang, L. Yang, J. -Y. Yeh, J. Yip, and K. Mistry, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2008, 637.
3. G. K. Dalapati, Y. Tong, W. Y. Loh, H. K. Mun, and B. J. Cho, Appl. Phys. Lett. 0003-6951 90, 183510 (2007). 10.1063/1.2732821 (Pubitemid 46701228)
4. K. H. Shiu, T. H. Chiang, P. Chang, L. T. Tung, M. Hong, J. Kwo, and W. Tsai, Appl. Phys. Lett. 0003-6951 92, 172904 (2008). 10.1063/1.2918835 (Pubitemid 351624911)
5. T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang, Appl. Phys. Lett. 0003-6951 93, 033516 (2008). 10.1063/1.2956393
6. H. C. Lin, T. Yang, H. Sharifi, S. K. Kim, Y. Xuan, T. Shen, S. Mohammadi, and P. D. Ye, Appl. Phys. Lett. 0003-6951 91, 212101 (2007). 10.1063/1.2814052 (Pubitemid 350159039)
7. F. S. Aguirre-Tostado, M. Milojevic, K. J. Choi, H. C. Kim, C. L. Hinkle, E. M. Vogel, J. Kim, T. Yang, Y. Xuan, P. D. Ye, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 93, 061907 (2008). 10.1063/1.2961003
8. H. -C. Chin, X. Liu, X. Gong, and Y. -C. Yeo, IEEE Trans. Electron Devices 0018-9383 57, 973 (2010). 10.1109/TED.2010.2044285
9. C. -H. Chang, Y. -K. Chiou, Y. -C. Chang, K. -Y. Lee, T. -D. Lin, T. -B. Wu, M. Hong, and J. Kwo, Appl. Phys. Lett. 0003-6951 89, 242911 (2006). 10.1063/1.2405387 (Pubitemid 46016063)
10. G. Brammertz, H. -C. Lin, M. Caymax, M. Meuris, M. Heyns, and M. Passlack, Appl. Phys. Lett. 0003-6951 95, 202109 (2009). 10.1063/1.3267104
11. Y. -T. Chen, H. Zhao, Y. Wang, F. Xue, F. Zhou, and J. C. Lee, Appl. Phys. Lett. 0003-6951 96, 103506 (2010). 10.1063/1.3357434
12. N. Li, E. S. Harmon, J. Hyland, D. B. Salzman, T. P. Ma, Y. Xuan, and P. D. Ye, Appl. Phys. Lett. 0003-6951 92, 143507 (2008). 10.1063/1.2908926 (Pubitemid 351535670)
13. D. Wheeler, L. -E. Wernersson, L. Fröberg, C. Thelander, A. Mikkelsen, K. -J. Weststrate, A. Sonnet, E. M. Vogel, and A. Seabaugh, Microelectron. Eng. 0167-9317 86, 1561 (2009). 10.1016/j.mee.2009.03.091
14. R. Timm, A. Fian, M. Hjort, C. Thelander, E. Lind, J. N. Andersen, L. -E. Wernersson, and A. Mikkelsen, Appl. Phys. Lett. 0003-6951 97, 132904 (2010). 10.1063/1.3495776
15. Y. S. Kang, C. Y. Kim, M. -H. Cho, K. B. Chung, C. -H. An, H. Kim, H. J. Lee, C. S. Kim, and T. G. Lee, Appl. Phys. Lett. 0003-6951 97, 172108 (2010). 10.1063/1.3506695
16. M. Xu, Y. Q. Wu, O. Koybasi, T. Shen, and P. D. Ye, Appl. Phys. Lett. 0003-6951 94, 212104 (2009). 10.1063/1.3147218
17. M. Xu, K. Xu, R. Contreras, M. Milojevic, T. Shen, O. Koybasi, Y. Q. Wu, R. M. Wallace, and P. D. Ye, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2009, 865.
18. M. Scarrozza, G. Pourtois, M. Houssa, M. Caymax, A. Stesmans, M. Meuris, and M. M. Heyns, Appl. Phys. Lett. 0003-6951 95, 253504 (2009). 10.1063/1.3275737
19. A. Schwarz, W. Allers, U. D. Schwarz, and R. Wiesendanger, Appl. Surf. Sci. 0169-4332 140, 293 (1999). 10.1016/S0169-4332(98)00543-1
20. W. Melitz, J. Shen, S. Lee, J. S. Lee, A. C. Kummel, R. Droopad, and E. T. Yu, J. Appl. Phys. 0021-8979 108, 023711 (2010). 10.1063/1.3462440
21. P. D. Ye, J. Vac. Sci. Technol. A 0734-2101 26, 697 (2008). 10.1116/1.2905246
22. H. Zhao, J. Huang, Y. -T. Chen, J. H. Yum, Y. Wang, F. Zhou, F. Xue, and J. C. Lee, Appl. Phys. Lett. 0003-6951 95, 253501 (2009). 10.1063/1.3275001
23. H. -P. Komsa and A. Pasquarello, Appl. Phys. Lett. 0003-6951 97, 191901 (2010). 10.1063/1.3515422
24. M. Losurdo, M. M. Giangregorio, F. Lisco, P. Capezzuto, G. Bruno, S. D. Wolter, M. Angelo, and A. Brownb, J. Electrochem. Soc. 0013-4651 156, H263 (2009). 10.1149/1.3076194