A study on the diamond grinding of ultra-thin silicon wafers

Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture

Volumn 226, Issue 1, 2012, Pages 66-75

  Zhou, L ^a   Tian, Y B ^a,b   Huang, H ^c   Sato, H ^a   Shimizu, J ^a  

^a IBARAKI UNIVERSITY   (Japan)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^c UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

Grain depth of cut; Minimum wafer thickness; Silicon wafer; Subsurface damage; Thinning process

Indexed keywords

DEPTH OF CUT; DIAMOND GRINDING; GRINDING CONDITIONS; GRINDING PERFORMANCE; MINIATURIZED ELECTRONICS; RAPID DEVELOPMENT; SUB-SURFACE DAMAGE; THINNING PROCESS; ULTRAPRECISION GRINDING; ULTRATHIN SILICON; WAFER THICKNESS;

GRINDING (MACHINING); GRINDING MILLS; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 84862942950     PISSN: 09544054     EISSN: 20412975     Source Type: Journal    
DOI: 10.1177/0954405411414768     Document Type: Conference Paper

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