Development of single step grinding system for large scale ϕ 300 Si wafer: A total integrated fixed-abrasive solution

CIRP Annals - Manufacturing Technology

Volumn 50, Issue 1, 2001, Pages 225-228

  Eda, H ^a   Zhou, L ^a   Nakano, H ^a   Kondo, R ^a   Shimizu, J ^a   Nagao, T ^b  

^a IBARAKI UNIVERSITY   (Japan)

^b KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Grinding; Positioning; Silicon wafer

Indexed keywords

ABRASIVES; COOLING SYSTEMS; ENERGY UTILIZATION; GRINDING (MACHINING); LSI CIRCUITS; MAGNETOSTRICTIVE DEVICES; SILICON WAFERS; SURFACE ROUGHNESS;

FIXED ABRASIVES; GIANT MAGNETOSTRICTIVE MATERIALS (GMM);

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0034956314     PISSN: 00078506     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0007-8506(07)62110-6     Document Type: Article

References (6)

1. Abrasive machining of silicon
2. JSME
3. Preisach modelling of magnetostrictive hysteresis
4. Ultra-precise machine tool equipped with a giant magnetostriction actuator
5. Development of one-stop machining system for ϕ300mm Si wafer