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Volumn 182, Issue 1-3, 2007, Pages 157-162

Novel method to investigate the critical depth of cut of ground silicon wafer

Author keywords

Critical depth; Ductile regime; Grinding; Polishing; Silicon wafer; Subsurface damage

Indexed keywords

DUCTILITY; ETCHING; GRINDING (MACHINING); PARAMETER ESTIMATION; POLISHING; SURFACE ROUGHNESS; SURFACE TREATMENT;

EID: 33750634167     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2006.07.025     Document Type: Article
Times cited : (50)

References (10)
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  • 6
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    • Ductile regime grinding: a new technology for machining brittle materials
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    • Bifano, T.G.1    Dow, T.A.2    Scattergood, R.O.3
  • 10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.