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Volumn 182, Issue 1-3, 2007, Pages 157-162
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Novel method to investigate the critical depth of cut of ground silicon wafer
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Author keywords
Critical depth; Ductile regime; Grinding; Polishing; Silicon wafer; Subsurface damage
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Indexed keywords
DUCTILITY;
ETCHING;
GRINDING (MACHINING);
PARAMETER ESTIMATION;
POLISHING;
SURFACE ROUGHNESS;
SURFACE TREATMENT;
CRITICAL DEPTH;
DUCTILE REGIME;
GRINDING;
SUBSURFACE DAMAGE;
SILICON WAFERS;
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EID: 33750634167
PISSN: 09240136
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jmatprotec.2006.07.025 Document Type: Article |
Times cited : (50)
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References (10)
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