Study on structure transformation of Si wafer in grinding process

Key Engineering Materials

Volumn 329, Issue , 2007, Pages 373-378

  Zhou, Libo ^a   Yamaguchi, Makoto ^b   Shimizu, Jun ^a   Eda, Hiroshi ^a  

^a IBARAKI UNIVERSITY   (Japan)

^b Technical Research Institute   (Japan)

Author keywords

Amorphous silicon (a Si); Backgrinding; Chemo mechanical grinding; Poly crystal silicon (p Si); Raman spectroscopy; Single crystal silicon (c Si); Subsurface damage

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; GRINDING (MACHINING); GRINDING WHEELS; POLYCRYSTALS; RAMAN SPECTROSCOPY; SURFACE STRUCTURE;

BACKGRINDING; CHEMOMECHANICAL GRINDING; SINGLE CRYSTAL SILICON; SUBSURFACE DAMAGE;

SILICON WAFERS;

EID: 33846386221     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/0-87849-416-2.373     Document Type: Article

References (6)

1. T.G.Bifano, T.A.Dow and R. O Scattergood: Ductile-Regime Grinding: A New Technology for Machining Brittle Materials, ASME J. Eng'g for Industry, Vol.113/2(1991), pp. 184-189.
2. L.Zhang and I. Zarudi: Towards a Deeper Understanding of Plastic Deformation in Single crystal Silicon, Int'l J. of Mechanical Sciences,Vol. 43 (2001), pp.1985-1996.
3. P. Halahan and T. Schraub: Backgrinding technologies for thin-wafer production webpage. http://www.chipscalereview.com/issues/0102/f6_01.html.
4. J. Chen and I. D. Wolf: Study of damage and stress induced by backgrinding in Si wafers. Semiconductor Science and Technology, Vol. 18(2003), pp.261-268.
5. Renishaw application note: Imaging of silicon stress in microelectronics using Raman spectroscopy, Issue 1.0(2003).
6. L. Zhou, J. Shimizu and H. Eda: A novel fixed abrasive process: chemo-mechanical grinding technology. Int. J. Manufacturing Tech. and Management, Vol.7, No.5/6(2005), pp.441-454.