Formation mechanism of nanocrystalline high-pressure phases in silicon during nanogrinding

Nanotechnology

Volumn 18, Issue 46, 2007, Pages

  Wang, Y ^a   Zou, J ^a   Huang, H ^a   Zhou, L ^b   Wang, B L ^a   Wu, Y Q ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b IBARAKI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; GRINDING (MACHINING); PHASE TRANSITIONS; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS LAYERS; NANOGRINDING;

NANOCRYSTALLINE SILICON;

NANOCRYSTAL; SILICON;

ARTICLE; CHEMICAL ANALYSIS; EXPERIMENTAL STUDY; PRESSURE MEASUREMENT; PRIORITY JOURNAL; RAMAN SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 36048980661     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/46/465705     Document Type: Article

References (25)

1. Williams J S, Chen Y, Wong-Leung J, Kerr A and Swain M V 1999 J. Mater. Res. 14 2338
2. Kim D E and Oh S I 2006 Nanotechnology 17 2259
3. Tolbert S H, Herhold A B, Brus L E and Alivisatos A P 1996 Phys. Rev. Lett. 76 4384
4. Cheong W C D and Zhang L C 2000 Nanotechnology 11 173
5. Ge D, Domnich V and Gogotsi Y 2004 J. Appl. Phys. 95 2725
6. Ruffell S, Bradby J E and Williams J S 2006 Appl. Phys. Lett. 89 091919
7. Zarudi I, Zhang L C, Zou J and Vodenitcharova T 2004 J. Mater. Res. 19 332
8. Schuh C A, Mason J K and Lund A C 2005 Nat. Mater. 4 617
9. Cross G L W, Schirmeisen A, Grutter P and Durig U T 2006 Nat. Mater. 5 370
10. Gatzen H H and Maetzig J C 1997 Precis. Eng. 21 134
11. Bradby J E, Williams J S, Wong-Leung J, Swain M V and Munroe P 2001 J. Mater. Res. 16 1500
12. Huang H, Wang B L, Wang Y, Zou J and Zhou L 2007 Mater. Sci. Eng. A at press doi:10.1016/j.msea.2007.06.061
13. Zarudi I and Zhang L C 1998 J. Mater. Proc. Tech. 84 149
14. Puttick K E, Whitmore L C, Chao C L and Gee A E 1994 Phil. Mag. A 69 91
15. Zhang Y, Kang R, Guo D and Jin Z 2007 Rare Met. 26 13
16. Zhou L, Eda H, Shimizu J, Kamiya S, Iwase H and Kimura S 2006 CIRP Annals-Manufacturing Technology 55 313
17. Jang J, Lance M J, Wen S, Tsui T Y and Pharr G M 2005 Acta Mater. 53 1759
18. Gassilloud R, Ballif C, Gasser P, Buerki G and Michler J 2005 Phys. Status Solidi a 202 2858
19. Crain J, Ackland G J, Maclean J R, Piltz R O, Hatton P D and Pawley G S 1994 Phys. Rev. B 50 13043
20. Yan J, Takahashi H, Gai X, Harada H, Tamaki J and Kuriyagawa T 2006 Mater. Sci. Eng. A 423 19
21. Domnich V, Gogotsi Y and Dub S 2000 Appl. Phys. Lett. 76 2214
22. Zarudi I, Zou J, McBride W and Zhang L C 2004 Appl. Phys. Lett. 85 932
23. Zhang L C and Zarudi I 2001 Int. J. Mech. Sci. 43 1985
24. Yan J, Takahashi H, Tamaki J, Gai X and Kuriyagawa T 2005 Appl. Phys. Lett. 87 211901
25. Kailer A, Gogotsi Y G and Nickel K G 1996 J. Appl. Phys. 81 3057