4H-SiC trench metal oxide semiconductor field effect transistors with low on-resistance

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Nakano, Yuki ^a   Mukai, Toshikazu ^a   Nakamura, Ryota ^a   Nakamura, Takashi ^a   Kamisawa, Akira ^a  

^a ROHM CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING VOLTAGE; CRYSTALLOGRAPHIC PLANE; DRAIN-SOURCE CURRENTS; DRAIN-SOURCE VOLTAGE; GATE-SOURCE VOLTAGE; ICP-RIE; INDUCTIVE COUPLED PLASMA; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; ON-RESISTANCE; SINGLE CHANNELS; SPECIFIC-ON-RESISTANCE; TRENCH ETCHING; TRENCH MOSFETS; UNIT CELLS;

DRAIN CURRENT; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SINGLE CRYSTALS;

FIELD EFFECT TRANSISTORS;

EID: 77952522849     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C100     Document Type: Article

References (2)

1. H. Nakao, H. Mikami, H. Yano, T. Hatayama, Y. Uraoka, and T. Fuyuki: Mater. Sci. Forum 527-529 (2006) 1293.
2. H. Yano, H. Nakao, T. Hatayama, Y. Uraoka, and T. Fuyuki: Mater. Sci. Forum 556-557 (2007) 807.