AlGaN/GaN heterostructure field-effect transistors with multi-Mg xN y/GaN buffer and Photo-CVD SiO 2 gate dielectric

Solid-State Electronics

Volumn 72, Issue , 2012, Pages 38-43

  Lee, K H ^a   Chang, P C ^b   Chang, S J ^c   Su, Y K ^b,c  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Heterostructure field effect transistors; Multi Mg xN y GaN buffer; Photo CVD SiO 2

Indexed keywords

1/F NOISE; ALGAN; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; ALGAN/GAN HFETS; CHANNEL CURRENTS; GATE INSULATOR; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HIGH QUALITY; METAL OXIDE SEMICONDUCTOR; MOS-HFETS; MOSHFET; MULTI-MG XN Y/GAN BUFFER; PHOTO-CVD; RF CURRENTS; SURFACE PASSIVATION; TRAPPING EFFECTS;

CHEMICAL VAPOR DEPOSITION; GATE DIELECTRICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; VAPORS;

GALLIUM NITRIDE;

EID: 84862822271     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.02.009     Document Type: Article

References (28)

1. P.C. Chang, and C.L. Yu The influence of vicinal-cut sapphire substrate on AlGaN/GaN heterostructure by MOCVD J Electrochem Soc 155 6 2008 H369 H372
2. R.W. Chuang, C.L. Yu, S.J. Chang, P.C. Chang, J.C. Lin, and T.M. Kuan Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0 0 0 1) substrates J Cryst Growth 308 2007 252 257
3. B. Jogai Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors J Appl Phys 93 3 2003 1631 1635
4. x passivated AlGaN/GaN HFETs IEEE Electron Dev Lett 27 1 2006 1 3
5. A. Tarakji, X. Hu, A. Koudymov, G. Simin, J. Yang, and M.A. Khan DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress Solid-State Electron 46 2002 1211 1214
6. M.A. Khan, X. Hu, G. Sumin, A. Lunev, J. Yang, and R. Gaska AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor IEEE Electron Dev Lett 21 2 2000 63 65
7. 2/AlGaN/InGaN/GaN MOSDHFETs IEEE Electron Dev Lett 23 2002 458 460
8. y/GaN buffer layers by metal organic chemical vapor deposition Appl Phys Lett 90 2007 212109
9. y-GaN buffer layer IEEE J Quantum Electron 44 2008 916 921
10. K.H. Lee, S.J. Chang, P.C. Chang, Y.C. Wang, and C.H. Kuo High quality GaN-based Schottky barrier diodes Appl Phys Lett 93 2008 132110
11. y/GaN buffer J Electrochem Soc 155 2008 H716 H719
12. S.C. Wei, Y.K. Su, S.J. Chang, S.M. Chen, and W.L. Li Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers IEEE Trans Electron Dev 52 6 2005 1104 1109
13. I.M. Abdel-Motaleb, and R.Y. Korotkov Modeling of electron mobility in GaN materials J Appl Phys 97 2005 093715
14. D.W. DiSanto, H.F. Sun, and C.R. Bolognesi Ozone passivation of slow transient current collapse in AlGaN/GaN field-effect transistors: the role of threading dislocations and the passivation mechanism Appl Phys Lett 88 2006 013504
15. E.H. Nicollian, and J.R. Brews MOS physics and technology 1982 Wiley New York, USA
16. J. Tan, M.K. Das, J.A. Cooper, and M.R. Melloch Metal-oxide-semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC Appl Phys Lett 70 17 1997 2280 2281
17. 2/n-GaN metal-insulator-semiconductor structures Appl Phys Lett 79 2001 3530 3532
18. 2 interfaces in MOS devices Surf Sci 566-568 2004 356 360
19. x as gate insulators on AlGaN/GaN heterostructure field-effect transistors J Appl Phys 98 2005 064506
20. J. Peransin, P. Vignaud, D. Rigaud, and L. Vandamme 1/f noise in MODFET's at low drain bias IEEE Trans Electron Dev 37 1990 2250 2253
21. F.N. Hooge, T.G.M. Kleinpenning, and L.K.J. Vandamme Experimental studies on l/f noise Rep Prog Phys 44 1981 479 532
22. F.N. Hooge l/f Noise sources IEEE Trans Electron Dev 41 11 1994 1926 1935
23. S. Rumyantsev, M.E. Levinshtein, R. Gaska, M.S. Shur, J.W. Yang, and M.A. Khan Low-frequency noise in AlGaN/GaN heterojunction field effect transistors on SiC and sapphire substrates J Appl Phys 87 4 2000 1849 1854
24. S.L. Rumyantsev, N. Pala, M.S. Shur, R. Gaska, M.E. Levinshtein, and M.A. Khan Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors J Appl Phys 88 11 2000 6726 6730
25. S.A. Vitusevich, S.V. Danylyuk, N. Klein, M.V. Petrychuk, A.Y. Avksentyev, and V.N. Sokolov Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels Appl Phys Lett 82 5 2003 748 750
26. G. Verzellesi, R. Pierobon, F. Rampazzo, G. Meneghesso, A. Chini, and U.K. Mishra Experimental/numerical investigation on current collapse in AlGaN-GaN HEMTs Electron Dev Meeting Tech Dig Int 2002 689 692
27. A.F.M. Anwar, S.S. Islam, and R.T. Webster Carrier trapping and current collapse mechanism in GaN metal-semiconductor field-effect transistors Appl Phys Lett 84 11 2004 1970 1972
28. S.S. Islam, and A.F.M. Anwar Self-heating and trapping effects on the RF performance of GaN MESFETs IEEE Trans Microw Theory Tech 52 4 2004 4056 4058