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Journal of the Electrochemical Society

Volumn 155, Issue 6, 2008, Pages

The influence of vicinal-cut sapphire substrate on AlGaN/GaN heterostructure by MOCVD

(2) Chang, Ping Chuan a Yu, Chia Lin b

a NAN JEON INSTITUTE OF TECHNOLOGY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; WET ETCHING;

CRYSTAL QUALITY; VICINAL-CUT SAPPHIRE;

HETEROJUNCTIONS;

EID: 43049131475 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2900099 Document Type: Article

Times cited : (3)

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