Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Surface Science

Volumn 566-568, Issue 1-3 PART 1, 2004, Pages 356-360

  Bae, C ^a   Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Dielectric phenomena; Interface states; Metal oxide semiconductor (MOS) structures; Plasma processing; Surface defects

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BONDING; DEFECTS; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; MIXTURES; MOS DEVICES; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

DIELECTRIC PHENOMENA; INTERFACE STATES; PLASMA PROCESSING; SURFACE DEFECTS;

INTERFACES (MATERIALS);

EID: 4544374418     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.05.072     Document Type: Conference Paper

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4. Lee D.R., Lucovsky G. J. Vac. Sci. Technol. B. 13:1995;1778.