Carrier trapping and current collapse mechanism in GaN metal-semiconductor field-effect transistors

Applied Physics Letters

Volumn 84, Issue 11, 2004, Pages 1970-1972

  Anwar, A F M ^a   Islam, Syed S ^b   Webster, Richard T ^c  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b Kate Gleason College of Engineering   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER INTERFACES; ELECTRON TRANSITION;

BAND STRUCTURE; ELECTRIC POTENTIAL; GALLIUM NITRIDE; INTERFACES (MATERIALS); IONIZATION; MATHEMATICAL MODELS; MESFET DEVICES; PERMITTIVITY; SEMICONDUCTOR DOPING;

FIELD EFFECT TRANSISTORS;

EID: 1842788508     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1682700     Document Type: Article

References (18)

1. L. Shen, R. Coffie, S. Heikman, D. Buttari, A. Chini, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, Conference Digest (Late News Paper) Device Research Conference, 23-25 June 2003, Salt Lake City, Utah.
2. W. Lu, J. Yang, M. A. Khan and I. Adesida, IEEE Trans. Electron Devices 48, 581 (2001).
3. I. Daumiller, C. Kirchner, M. Kamp, K. Ebeling, L. Pond, C. E. Weitzel, and E. Kohn, Device Res. Conf. Dig. 114 (1998).
4. L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. R. Shealy, IEEE Trans. Electron Devices 48, 479 (2001).
5. S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, IEEE Trans. Electron Devices 48, 465 (2001).
6. Y.-M. Hsin, H.-T. Hsu, C.-C. Chuo, and J.-I. Chyi, IEEE Electron Device Lett. 22, 501 (2001).
7. P. B. Klein, S. C. Binari, J. A. Freitas Jr., and A. E. Wickenden, J. Appl. Phys. 88, 2843 (2000).
8. S. C. Binari, W. Kruppa, H. B. Dietrich, G. Keiner, A. E. Wickenden, and J. A. Freitas Jr., Solid-State Electron. 41, 1549 (1997).
9. K. Kunihiro, K. Kasahara, Y. Takahashi, and Y. Ohno, IEEE Electron Device Lett. 20, 608 (1999).
10. S. Arulkumaran, T. Egawa, H. Ishikawa, and T. Jimbo, Appl. Phys. Lett. 81, 3073 (2002).
11. C. Kocot and C. A. Stolte, IEEE Trans. Microwave Theory Tech. 30, 963 (1982).
12. N. I. Kuznetsov, A. E. Nikolaev, A. S. Zubrilov, Yu. V. Melnik, and V. A. Dmitriev, Appl. Phys. Lett. 75, 3138 (1999).
13. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, and S. J. Pearton, Appl. Phys. Lett. 83, 3314 (2003).
14. C. R. Abernathy, J. D. MacKenzie, S. J. Pearton, and W. S. Hobson, Appl. Phys. Lett. 66, 1969 (1995).
15. J. B. Webb, H. Tang, S. Rolfe, and J. A. Bardwell, Appl. Phys. Lett. 75, 953 (1999).
16. R. Armitage, W. Hong, Q. Yang, H. Keick, J. Gebauer, E. R. Weber, S. Hautakangas, and K. Saarinen, Appl. Phys. Lett. 82, 3457 (2003).
17. L. Zhang, L. F. Lester, A. G. Baca, R. J. Shul, P. C. Chang, C. G. Willison, U. K. Mishra, S. P. Denbaars, and J. C. Zolper, IEEE Trans. Electron Devices 47, 507 (2000).
18. W. Gotz and N. M. Johnson, Gallium Nitride (GaN) II, Semiconductors and Semimetals, edited by J. Pankove and T. Moustakas (Academic, New York, 1999), pp. 57, 185.