Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0 0 0 1) substrates

Journal of Crystal Growth

Volumn 308, Issue 2, 2007, Pages 252-257

  Chuang, R W ^a   Yu, C L ^a   Chang, S J ^a   Chang, P C ^b   Lin, J C ^a   Kuan, T M ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

A3. MOCVD; B1. AlGaN GaN; B1. Vicinal cut sapphire; B3. Schottky diode

Indexed keywords

COALESCENCE; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES;

CRYSTAL QUALITY; SAPPHIRE SUBSTRATE; STEP-FLOW MODE; TWO-DIMENSIONAL ISLANDS; VICINAL-CUT SAPPHIRE;

SAPPHIRE;

EID: 35348856866     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.08.015     Document Type: Article

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