Effects of buffer layer thickness on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy

Vacuum

Volumn 86, Issue 9, 2012, Pages 1373-1379

  Kim, Min Su ^a   Kim, Do Yeob ^b   Cho, Min Young ^a   Nam, Giwoong ^a   Kim, Soaram ^a   Lee, Dong Yul ^c   Kim, Sung O ^b   Leem, Jae Young ^a  

^a Inje University   (South Korea)

^b Clemson University   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Photoluminescence; Plasma assisted molecular beam epitaxy; Porous silicon; Thin film; Zinc oxide

Indexed keywords

ATOMIC FORCE MICROSCOPIES (AFM); BUFFER LAYER THICKNESS; CRYSTAL QUALITIES; DIFFRACTION PEAKS; FABRY PEROT INTERFERENCE; GRAIN SIZE; INTENSITY RATIO; PL SPECTRA; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPIES (SEM); STRUCTURAL AND OPTICAL PROPERTIES; ULTRA-VIOLET; UV EMISSIONS; VISIBLE EMISSIONS; ZINC OXIDE (ZNO); ZNO BUFFER LAYER; ZNO THIN FILM;

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; EPITAXIAL GROWTH; FILM THICKNESS; INTERFERENCE SUPPRESSION; MOLECULAR BEAM EPITAXY; OPTICAL FILMS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SILICON; X RAY DIFFRACTION; ZINC OXIDE;

METALLIC FILMS;

EID: 84862810541     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2012.01.006     Document Type: Conference Paper

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