Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering

Applied Surface Science

Volumn 255, Issue 11, 2009, Pages 5876-5880

  You, J B ^a   Zhang, X W ^a   Fan, Y M ^a   Yin, Z G ^a   Cai, P F ^a   Chen, N F ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Crystal quality; RF magnetron sputtering; Semiconducting II VI materials; Zinc oxide

Indexed keywords

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; FILM GROWTH; GROWTH TEMPERATURE; II-VI SEMICONDUCTORS; MAGNESIUM COMPOUNDS; MAGNETRON SPUTTERING; METALLIC FILMS; PHOTOLUMINESCENCE; SAPPHIRE; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

CRYSTAL QUALITIES; DIFFERENT SUBSTRATES; PHOTOLUMINESCENCE AND HALL MEASUREMENTS; RADIO FREQUENCY MAGNETRON SPUTTERING; RESIDUAL CARRIER CONCENTRATION; RF-MAGNETRON SPUTTERING; SEMICONDUCTING II-VI MATERIALS; ULTRAVIOLET EMISSION;

WIDE BAND GAP SEMICONDUCTORS;

EID: 60949087938     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.01.024     Document Type: Article

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