Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy

Journal of Crystal Growth

Volumn 181, Issue 1-2, 1997, Pages 165-169

  Chen, Yefan ^a   Bagnall, D M ^a   Zhu, Ziqiang ^a   Sekiuchi, Takashi ^a   Park, Ki Tae ^a   Hiraga, Kenji ^a   Yao, Takafumi ^c   Koyama, S ^b   Shen, M Y ^b   Goto, T ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NONE

Author keywords

Growth; MBE; Optoelectronic; Plasma; Sapphire; ZnO

Indexed keywords

CRYSTAL IMPURITIES; EMISSION SPECTROSCOPY; EXCITONS; FILM GROWTH; MOLECULAR BEAM EPITAXY; NUCLEATION; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; THIN FILMS;

EXCITON EMISSION; GROWTH MODE; PHOTOLUMINESCENCE SPECTROSCOPY; PLASMA ENHANCED MOLECULAR BEAM EPITAXY;

CRYSTAL GROWTH;

EID: 0031549552     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00286-8     Document Type: Article

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