Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 100, Issue 22, 2012, Pages

  Xu, Weikai ^a   Rao, Hemant ^a   Bosman, Gijs ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ELECTRICAL STRESS; ELECTRON VELOCITY; GATE BIAS VOLTAGE; GATE CURRENT; GATE EDGE; GATE STACKS; GATE-LEAKAGE CURRENT; HIGH ELECTRIC FIELDS; LEAKAGE PATHS; ROOM TEMPERATURE; SHALLOW TRAPS; SMALL AREA; SPACE CHARGE LIMITED FLOW; TRANSPORT PARAMETERS;

ELECTRIC FIELDS; HIGH ELECTRON MOBILITY TRANSISTORS;

GALLIUM NITRIDE;

EID: 84862147585     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4724207     Document Type: Article

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