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Volumn 41, Issue 9, 2006, Pages 2685-2690
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The structure and properties of dislocations in GaN
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Author keywords
[No Author keywords available]
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Indexed keywords
CATHODOLUMINESCENCE;
CRYSTAL GROWTH;
CRYSTAL STRUCTURE;
DISLOCATIONS (CRYSTALS);
ELECTRON HOLOGRAPHY;
OPTOELECTRONIC DEVICES;
TRANSMISSION ELECTRON MICROSCOPY;
CORE STRUCTURE;
GAN FILMS;
IMPURITY SEGREGATION;
OPTOELECTRONIC PROPERTIES;
GALLIUM NITRIDE;
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EID: 33744545748
PISSN: 00222461
EISSN: 15734803
Source Type: Journal
DOI: 10.1007/s10853-006-7871-2 Document Type: Conference Paper |
Times cited : (17)
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References (15)
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