Space charge limited electron transport in AlGaN photoconductors

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Lebedev, V ^a   Cherkashinin, G ^a   Ecke, G ^a   Cimalla, I ^a   Ambacher, O ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; PHOTOCONDUCTING MATERIALS;

BROAD-BAND TRAP DISTRIBUTION; CARRIER TRAPPING EFFECT;

ELECTRIC SPACE CHARGE;

EID: 33847166158     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433139     Document Type: Article

References (49)

1. E. Monroy, F. Call, E. Munoz, and F. Omnes, III-Nitride Semiconductors: Application and Devices, edited by, E. Yu, and, M. Manasreh, (Gordon and Breach, New York, 2000).
2. E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, and P. Gibart, J. Phys.: Condens. Matter 13, 7115 (2001).
3. A. Meeder, D. Fuertes Marron, A. Rumberg, M. Lux-Steiner, V. Chu, and J. Conde, J. Appl. Phys. 92, 3016 (2002).
4. S. Rosner, E. Carr, M. Ludowise, G. Girolami, and H. Erikson, Appl. Phys. Lett. 70, 420 (1997).
5. T. Sugahara, Jpn. J. Appl. Phys., Part 2 37, L398 (1998).
6. S. Dassonneville, A. Amokrane, B. Sieber, J.-L. Farvacque, B. Beaumont, and P. Gibart, J. Appl. Phys. 89, 3736 (2001).
7. N. Gmeinwieser, J. Appl. Phys. 96, 3666 (2004).
8. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 0163-1829 10.1103/PhysRevB.50.8067 50, 8067 (1994); J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996).
9. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 0163-1829 10.1103/PhysRevB.50.8067 50, 8067 (1994); J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996).
10. K. Saarinen, Phys. Rev. Lett. 79, 3030 (1997).
11. T. Onuma, J. Appl. Phys. 95, 2495 (2004).
12. V. Lebedev, J. Appl. Phys. 100, 094902 (2006).
13. S. Chichibu, A. Uedono, T. Onuma, T. Sota, B. Haskell, S. DenBaars, J. Speck, and S. Nakamura, Appl. Phys. Lett. 86, 021914 (2005).
14. M. Manfra, K. Baldwin, A. Sergent, K. West, R. Molnar, and J. Caissie, Appl. Phys. Lett. 85, 5394 (2004).
15. Z.-Q. Fang, D. Look, D. Kim, and I. Adesida, Appl. Phys. Lett. 87, 182115 (2005).
16. C. Van de Walle and J. Neugebauer, J. Appl. Phys. 95, 3851 (2004).
17. H. Morko̧, Mater. Sci. Eng., R. 33, 135 (2001).
18. C. Daz-Guerra, J. Piqueras, A. Castaldini, A. Cavallini, and L. Polenta, J. Appl. Phys. 94, 2341 (2003).
19. L. Tan, S. Prakesh, K. M. Ng, A. Raman, S. J. Chua, A. Wee, and S. L. Lim, Semicond. Sci. Technol. 15, 585 (2000).
20. E. Monroy, F. Calle, J. Pau, F. Sánchez, E. Muoz, F. Omǹs, B. Beaumont, and P. Gibart, J. Appl. Phys. 88, 2081 (2000).
21. M. Hanzaz, A. Bouhdada, P. Gibart, and F. Omǹs, J. Appl. Phys. 92, 13 (2002).
22. C. Wetzel, Phys. Rev. Lett. 78, 3923 (1997).
23. S. Bradley, S. Goss, L. Brillson, J. Hwang, and W. Schaff, J. Vac. Sci. Technol. B 21, 2558 (2003).
24. M. McCluskey, N. Johnson, C. Van de Walle, D. Bour, M. Kneissl, and W. Walukiewicz, Phys. Rev. Lett. 80, 4008 (1998).
25. C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. Bremser, and R. Davis, Appl. Phys. Lett. 74, 3833 (1999).
26. A. Rose and M. Lampert, Phys. Rev. 113, 1227 (1959).
27. E. Bhattacharya, S. Guha, K. Krishna, and D. Bapat, J. Appl. Phys. 53, 6285 (1982).
28. R. L. Weisfield, J. Appl. Phys. 54, 6401 (1983).
29. B. Gan, J. Appl. Phys. 89, 5747 (2001).
30. A. Rose, Phys. Rev. 97, 1538 (1955).
31. M. A. Lampert and P. Park, Current Conduction in Solids (Academic, New York, 1970).
32. V. Lebedev, I. Cimalla, V. Cimalla, R. Wagner, U. Kaiser, and O. Ambacher, Phys. Status Solidi C 2, 1360 (2005).
33. V. Lebedev, J. Appl. Phys. 98, 093508 (2005).
34. T. Larason, S. Bruce, and A. Parr, NIST Spec. Publ. 250, 13 (1998).
35. X. Dang, C. Wang, E. Yu, K. Boutors, and J. Redwing, Appl. Phys. Lett. 72, 2745 (1998).
36. M. Seah, in Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, edited by, D. Briggs, and, J. T. Grant, (IM, Chichester, 2003), Chap..
37. V. Cimalla, Phys. Status Solidi C 203, 59, (2006).
38. D. Look, D. Reynolds, W. Kim, Ö. Aktas, A. Botchkarev, A. Salvador, and H. Morko̧, J. Appl. Phys. 80, 2960 (1996).
39. S. Nespurek and J. Sworakowski, J. Appl. Phys. 51, 2098 (1980).
40. T. Graf, M. Gjukic, M. S. Brandt, M. Stutzmann, and O. Ambacher, Appl. Phys. Lett. 81, 5159 (2002).
41. V. Lebedev, I. Cimalla, U. Kaiser, and O. Ambacher, Phys. Status Solidi C 1, 233 (2004).
42. V. Arkhipov, P. Heremans, E. Emelianova, and G. Adriaenssens, Appl. Phys. Lett. 79, 4154 (2001).
43. M. Salis, A. Anedda, F. Quarati, A. J. Blue, and W. Cunningham, J. Appl. Phys. 97, 033709 (2005).
44. M. A. Khan, Q. Chen, C. J. Sun, J. W. Yang, M. S. Shur, and H. Park, Appl. Phys. Lett. 68, 514 (1996).
45. J. Li, J. Lin, H. Jiang, A. Salvador, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 69, 1474 (1996).
46. J. Li, J. Lin, H. Jiang, M. A. Khan, and Q. Chen, J. Appl. Phys. 82, 1227 (1997).
47. M. T. Hirsch, J. A. Wolk, W. Walukiewicz, and E. E. Haller, Appl. Phys. Lett. 71, 1098 (1997).
48. V. Ursaki, I. Tiginyanu, P. Ricci, A. Anedda, S. Hubbard, and D. Pavidis, J. Appl. Phys. 94, 3875 (2003).
49. S. Chung, O. Cha, Y. Kim, C. Hong, H. Lee, M. Jeong, J. White, and E. Suh, J. Appl. Phys. 89, 5454 (2001).