Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes

Semiconductor Science and Technology

Volumn 20, Issue 6, 2005, Pages 625-631

  Cetin, Hidayet ^a   Ayyildiz, Enise ^a  

^a ERCIYES UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; EVAPORATION; IONIZATION; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS; THERMIONIC EMISSION; ULTRASONICS;

BARRIER HEIGHTS; GAUSSIAN DISTRIBUTION; SCHOTTKY CONTACTS; THERMAL ANNEALING;

SCHOTTKY BARRIER DIODES;

EID: 18744403959     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/6/025     Document Type: Article

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