Fabrication and electrical properties of organic-on-inorganic Schottky devices

Journal of Physics Condensed Matter

Volumn 20, Issue 21, 2008, Pages

  Gullu O ^a   Ankaya, M ^a   Biber, M ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CURRENT VOLTAGE; DIRECT-EVAPORATION; ELECTRICAL PROPERTY; FORWARD BIAS; GLASS SUBSTRATES; IDEALITY FACTORS; INTERFACE DIPOLE; INTERFACIAL POTENTIAL; IV CHARACTERISTICS; OPTICAL BAND GAP ENERGY; ORGANIC FILMS; ORGANIC LAYERS; ORGANIC SEMICONDUCTOR; ORGANIC-INORGANIC; RECTIFYING BEHAVIORS; ROOM TEMPERATURE; SCHOTTKY; SCHOTTKY DEVICES; SCHOTTKY DIODES; SEMI-CONDUCTOR WAFER; THIN INTERLAYERS;

CAPACITANCE; DISTILLATION; PASSIVATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SILICON WAFERS; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77953586276     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/21/215210     Document Type: Article

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