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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 376, Issue 30-31, 2012, Pages 2134-2140

A new validation method for modeling nanogap fabrication by electromigration, based on the Resistance-Voltage (R-V) curve analysis

(4) Rattalino, Ismael a,b Motto, Paolo b Piccinini, Gianluca b Demarchi, Danilo a,b

a ISTITUTO ITALIANO DI TECNOLOGIA (Italy)

b POLITECNICO DI TORINO (Italy)

Author keywords

EIBJ; Electromigration; Modeling; Nanogap; Validation

Indexed keywords

FABRICATION; MODELS; NANOSTRUCTURES;

BREAK JUNCTIONS; DEGREE OF MATCHING; EIBJ; NANO-GAP; NANOGAP FABRICATION; NUMERICAL PREDICTIONS; RELIABLE MODELS; VALIDATION;

ELECTROMIGRATION;

EID: 84861614174 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/j.physleta.2012.05.020 Document Type: Article

Times cited : (20)

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