3D Modeling of electromigration combined with thermal-mechanical effect for IC device and package

Microelectronics Reliability

Volumn 48, Issue 6, 2008, Pages 811-824

  Liu, Yong ^a   Liang, Lihua ^b   Irving, Scott ^a   Luk, Timwah ^a  

^a FAIRCHILD SEMICONDUCTOR   (United States)

^b ZHEJIANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BRAZING; COMPUTER SIMULATION; CURRENT DENSITY; ELECTROMIGRATION; FINITE DIFFERENCE METHOD; LEAD; LOADS (FORCES); MATHEMATICAL MODELS; MESH GENERATION; METALLIZING; METALS; MODAL ANALYSIS; NUMBER THEORY; NUMERICAL METHODS; PACKAGING; PAPER; PIGMENTS; STRESSES; SYSTEMS ENGINEERING; TENSILE STRESS; THERMOANALYSIS; THREE DIMENSIONAL; WELDING;

(2+1)-DIMENSIONAL; CALCULATION ACCURACY; COMPUTATIONAL COSTS; DIRECT COUPLED; ELSEVIER (CO); EXPERIMENTAL RESULTS; FINITE ELEMENT (FE) MODELING; HIGH-CURRENT-DENSITY (HCD); IN ORDER; LEAD FREE SOLDER MATERIALS; MATERIAL MODELLING; MECHANICAL EFFECTS; MECHANICAL LOADS; MODELING METHODOLOGIES; NUMERICAL EXAMPLES; NUMERICAL EXPERIMENTS; NUMERICAL SIMULATION METHOD; SOLDER JOINT RELIABILITY (SJR); SOLDER JOINTS; STRESS FIELDS; SUB MODELS; TEST DATA; THREE DIMENSIONAL (3 D) MODELING; VISCO-PLASTIC;

FINITE ELEMENT METHOD;

EID: 45849150746     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.03.021     Document Type: Article

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