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Volumn 109, Issue 12, 2011, Pages

Gadolinium gallium oxide/gallium oxide insulators on GaAs and In 0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond

(5) Paterson, G W a Holland, M C a Bentley, S J a Thayne, I G a Long, A R a

a UNIVERSITY OF GLASGOW (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC STACK; ELECTRICAL CHARACTERISTIC; GAAS; GADOLINIUM GALLIUM OXIDES; INTERFACE STATE; INTERFACE STATE DENSITY EXTRACTION;

DIELECTRIC DEVICES; GADOLINIUM; GALLIUM ALLOYS; GALLIUM ARSENIDE; INTERFACES (MATERIALS); LEAD OXIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

MOS CAPACITORS;

EID: 79960201116 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3599895 Document Type: Article

Times cited : (11)

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