SCOPUS 정보 검색 플랫폼

Volumn 94, Issue 24, 2009, Pages

An investigation on the light-emission mechanism of metal-insulator- semiconductor light-emitting diodes with different SiGe quantum well structures

(1) Liao, Milton M H a

a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAP THICKNESS; ENERGY BAND; EXPERIMENTAL DATA; GATE BIAS; INFRARED EMISSIONS; METAL GATE; METAL-INSULATOR-SEMICONDUCTOR; METAL-INSULATOR-SEMICONDUCTOR LIGHT-EMITTING DIODE; NEGATIVE GATE; NEUTRAL REGION; P-TYPE; SEMICONDUCTOR SUBSTRATE; SIGE QUANTUM WELLS; TUNNELING DIODES; TUNNELING ELECTRONS;

CARRIER CONCENTRATION; CURRENT DENSITY; DIODES; LIGHT EMISSION; LIGHT EMITTING DIODES; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR QUANTUM WELLS; SILICON ALLOYS; SUBSTRATES; SWITCHING CIRCUITS; TUNNEL DIODES; TUNNELING (EXCAVATION);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649170753 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3155211 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.