The electrical properties of metal-oxide-semiconductor devices fabricated on the chemically etched n-InP substrate

Applied Surface Science

Volumn 253, Issue 14, 2007, Pages 5961-5966

  Cetin H ^a   Ayyildiz, E ^b  

^a BOZOK UNIVERSITY   (Turkey)

^b ERCIYES UNIVERSITY   (Turkey)

Author keywords

Compound semiconductor; Interface states; Metal interfacial layer semiconductor; Schottky barrier diode; X ray photoemission electron spectra

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ETCHING; REDUCTION; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

COMPOUND SEMICONDUCTOR; INTERFACE STATES; METAL-INTERFACIAL-LAYER-SEMICONDUCTOR; X-RAY PHOTOEMISSION ELECTRON SPECTRA;

SCHOTTKY BARRIER DIODES;

EID: 34247101535     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.12.110     Document Type: Article

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