Characterization of interfaces in nanoscale semiconductor devices by optimization of depth resolution in SIMS depth profiling

Applied Surface Science

Volumn 221, Issue 1-4, 2004, Pages 143-154

  Chakraborty, B R ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

Depth profile; Depth resolution; Interface; SIMS

Indexed keywords

CHARACTERIZATION; FIELD EFFECT TRANSISTORS; HEAVY IONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); ION BEAMS; MIS DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOS DEVICES; NANOSTRUCTURED MATERIALS; OPTIMIZATION; PLASMAS; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WELLS; SPUTTERING;

DEPTH PROFILE; DEPTH RESOLUTION;

SEMICONDUCTOR DEVICES;

EID: 0346948494     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00875-4     Document Type: Article

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