GaAs MOS capacitors with photo-CVD SiO2 insulator layers

Solid-State Electronics

Volumn 49, Issue 7, 2005, Pages 1077-1080

  Liu, C H ^a   Lin, T K ^b   Chang, S J ^b  

^a NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

GaAs; Photo CVD; SiO2

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC EXCITATION; INSULATION; MOSFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SILICA;

ANNEALED INSULATORS; EXCITATION SOURCE; PHOTO-CVD; STATE DENSITIES;

MOS CAPACITORS;

EID: 21444433481     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.05.006     Document Type: Article

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