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Journal of Physics D: Applied Physics

Volumn 45, Issue 23, 2012, Pages

Fabrication of SiC nanopillars by inductively coupled SF 6/O 2 plasma etching

(6) Choi, J H a,b Latu Romain, L b Bano, E a Dhalluin, F b Chevolleau, T b Baron, T b

a IMEP LAHC (France)

b Joseph Fourier University (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC STRUCTURE; ETCH DEPTH; ETCH PROFILE; ETCHING CONDITION; ETCHING PROCESS; ETCHING TIME; HEXAGONAL SHAPES; HIGH ANISOTROPY; HIGH ASPECT RATIO; HIGH ETCH RATE; HIGH SELECTIVITY; INDUCTIVELY-COUPLED; MASK EROSION; MASK PATTERNS; NANO SCALE; NANOMETRES; NANOPILLARS; TOP-DOWN FABRICATION;

ASPECT RATIO; INDUCTIVELY COUPLED PLASMA; MASKS; SULFUR HEXAFLUORIDE;

SILICON CARBIDE;

EID: 84861539174 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/23/235204 Document Type: Article

Times cited : (46)

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