Reactive ion etching of quartz and Pyrex for microelectronic applications

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3624-3629

  Zeze, D A ^a   Forrest, R D ^a   Carey, J D ^a   Cox, D C ^a   Robertson, I D ^a   Weiss, B L ^a   Silva, S R P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE; ETCH RATES; ETCHED REGION; ETCHED SURFACE; ETCHING , SURFACE ROUGHNESS; ETCHING PARAMETERS; ETCHING PROCESS; EX SITU; HIGH DEFINITION; HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPIES; MASKING TECHNIQUE; METALLIC MASKS; MICROELECTRONIC APPLICATIONS; MICROWAVE POWER; NANOMETRIC SCALE; RADIO FREQUENCIES; RELATIVE CONCENTRATION; RF-POWER; TAPER ANGLES; THIN METAL LAYERS;

ATOMIC FORCE MICROSCOPY; MICROELECTRONICS; QUARTZ; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS;

GAS MIXTURES;

EID: 18644373820     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503167     Document Type: Article

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