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Volumn 32, Issue 3 II, 2004, Pages 1362-1366

Magnetically enhanced inductively coupled plasma etching of 6H-SiC

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; EMISSION SPECTROSCOPY; NICKEL; OXYGEN; PLASMA ETCHING; PLASMA PROBES; SILICON CARBIDE; SILICON WAFERS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 4344560475     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2004.828821     Document Type: Article
Times cited : (16)

References (15)
  • 1
    • 21544464120 scopus 로고
    • Low damage and residue-free dry etching of 6H-SiC using electron cyclotron resonance plasma
    • K. Xie, J. R. Flemish, J. H. Zhao, W. R. Buchwald, and L. Casas, "Low damage and residue-free dry etching of 6H-SiC using electron cyclotron resonance plasma," Appl. Phys. Lett., vol. 67, no. 3, pp. 368-370, 1995.
    • (1995) Appl. Phys. Lett. , vol.67 , Issue.3 , pp. 368-370
    • Xie, K.1    Flemish, J.R.2    Zhao, J.H.3    Buchwald, W.R.4    Casas, L.5
  • 4
    • 0000725696 scopus 로고    scopus 로고
    • 6-based gas mixtures
    • 6-based gas mixtures," Appl. Phys. Lett., vol. 75, no. 15, pp. 2268-2270, 1999.
    • (1999) Appl. Phys. Lett. , vol.75 , Issue.15 , pp. 2268-2270
    • Khan, F.A.1    Adesida, I.2
  • 7
    • 0029358009 scopus 로고
    • Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas
    • P. H. Yih and A. J. Steckl, "Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas," J. Electrochem. Soc., vol. 142, no. 8, pp. 2853-2860, 1995.
    • (1995) J. Electrochem. Soc. , vol.142 , Issue.8 , pp. 2853-2860
    • Yih, P.H.1    Steckl, A.J.2
  • 11
    • 0030147014 scopus 로고    scopus 로고
    • Surface composition of CVD-grown α-SiC layers - An XPS and LEED study
    • H. Behner and R. Rupp, "Surface composition of CVD-grown α-SiC layers - An XPS and LEED study," Appl. Surf. Sci., vol. 99, no. 1, pp. 27-33, 1996.
    • (1996) Appl. Surf. Sci. , vol.99 , Issue.1 , pp. 27-33
    • Behner, H.1    Rupp, R.2
  • 12
    • 0034274585 scopus 로고    scopus 로고
    • Thermal removal of oxide and carbide from 6H-SiC surfaces before molecular beam epitaxial growth of GaN
    • Z. P. Guan, A. L. Cai, H. Porter, J. Cabalu, S. Huang, and R. E. Giedd, "Thermal removal of oxide and carbide from 6H-SiC surfaces before molecular beam epitaxial growth of GaN," Appl. Surf. Sci., vol. 165, no. 2-3, pp. 203-208, 2000.
    • (2000) Appl. Surf. Sci. , vol.165 , Issue.2-3 , pp. 203-208
    • Guan, Z.P.1    Cai, A.L.2    Porter, H.3    Cabalu, J.4    Huang, S.5    Giedd, R.E.6
  • 13
    • 0032674269 scopus 로고    scopus 로고
    • Effect of pure-solvents without deflocculants for finer SiC particle dispersed MgO based composite
    • Y. Choa, N. Bamba, H. Hayashi, H. Kondo, T. Sekino, and K. Niihara, "Effect of pure-solvents without deflocculants for finer SiC particle dispersed MgO based composite," J. Mater. Sci., vol. 34, no. 15, pp. 3789-3793, 1999.
    • (1999) J. Mater. Sci. , vol.34 , Issue.15 , pp. 3789-3793
    • Choa, Y.1    Bamba, N.2    Hayashi, H.3    Kondo, H.4    Sekino, T.5    Niihara, K.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.