The etching of silicon carbide in inductively coupled SF6/O2 plasma

Journal of Physics D: Applied Physics

Volumn 36, Issue 5, 2003, Pages 482-487

  Plank, N O V ^a   Blauw, M A ^a   Van Der Drift, E W J M ^a   Cheung, R ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPOSITION; CURRENT DENSITY; EMISSION SPECTROSCOPY; ETCHING; ION BOMBARDMENT; OPTICAL MICROSCOPY; OXYGEN; SILICON CARBIDE; SULFUR COMPOUNDS;

ION CURRENT DENSITY; OPTICAL EMISSION SPECTROSCOPY; SULFUR HEXAFLUORIDE;

INDUCTIVELY COUPLED PLASMA;

EID: 0037423956     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/5/310     Document Type: Article

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